JIANGSU 2SD886

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-126 Plastic-Encapsulate Transistors
2SD886
TRANSISTOR (NPN)
TO—126
FEATURES
Power dissipation
PCM:
1. EMITTER
1
W (Tamb=25℃)
2. COLLECTOR
Collector current
3
A
ICM:
Collector-base voltage
50
V
V(BR)CBO:
Operating and storage junction temperature range
3. BASE
123
TJ, Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Symbol
unless otherwise specified)
Test
conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
Ic=100µA, IE=0
50
V
Collector-emitter breakdown voltage
V(BR)CEO
Ic=5mA, IB=0
50
V
Emitter-base breakdown voltage
V(BR)EBO
IE=100µA, IC=0
5
V
Collector cut-off current
ICBO
VCB=50V, IE=0
1
µA
Emitter cut-off current
IEBO
VEB=3V, IC=0
1
µA
hFE(1)
VCE=2V, IC=20mA
100
hFE(2)
VCE=2V, IC=1A
100
Collector-emitter saturation voltage
VCE(sat)
IC=2A, IB=200mA
0.5
V
Base-emitter saturation voltage
VBE(sat)
IC=2A, IB=200mA
2
V
fT
VCE=5V, IC=100mA
80
MHz
Cob
VCB=10V, IE=0, f=1MHz
45
pF
DC current gain
Transition frequency
Collector output capacitance
400
Typical Characteristics
2SD886