SEMICONDUCTOR KF5N53F N CHANNEL MOS FIELD EFFECT TRANSISTOR TECHNICAL DATA General Description This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES ・VDSS= 525V, ID= 5.0A ・Drain-Source ON Resistance : RDS(ON)=1.5Ω @VGS = 10V ・Qg(typ) = 12nC MAXIMUM RATING (Tc=25℃) CHARACTERISTIC SYMBOL RATING UNIT Drain-Source Voltage VDSS 525 V Gate-Source Voltage VGSS ±30 V @TC=25℃ Drain Current @TC=100℃ ID 5.0* 2.9* A IDP 13* EAS 200 mJ EAR 4.3 mJ dv/dt 4.5 V/ns 37.9 W 0.30 W/℃ Tj 150 ℃ Tstg -55～150 ℃ Thermal Resistance, Junction-to-Case RthJC 3.3 ℃/W Thermal Resistance, Junction-toAmbient RthJA 62.5 ℃/W Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Tc=25℃ PD Derate above 25℃ Maximum Junction Temperature Storage Temperature Range Thermal Characteristics * : Drain current limited by maximum junction temperature. PIN CONNECTION 2011. 3. 31 Revision No : 0 1/6 KF5N53F ELECTRICAL CHARACTERISTICS (Tc=25℃) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT 525 - - V ID=250㎂, Referenced to 25℃ - 0.57 - V/℃ Static Drain-Source Breakdown Voltage BVDSS Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTj ID=250㎂ , VGS=0V Drain Cut-off Current IDSS VDS=525V, VGS=0V, - - 10 ㎂ Gate Threshold Voltage Vth VDS=VGS, ID=250㎂ 2.5 - 4.5 V Gate Leakage Current IGSS VGS=±30V, VDS=0V - - ±10 ㎂ VGS=10V, ID=2.5A - 1.35 1.5 Ω - 12 - - 2.4 - - 5.4 - - 30 - - 30 - - 60 - RDS(ON) Drain-Source ON Resistance Dynamic Qg Total Gate Charge Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-on Delay time td(on) tr Turn-on Rise time td(off) Turn-off Delay time VDS=400V, ID=5A VGS=10V (Note4,5) VDD=250V RL=50Ω RG=25Ω nC ns (Note4,5) Turn-off Fall time tf - 25 - Input Capacitance Ciss - 500 - Output Capacitance Coss - 65 - Reverse Transfer Capacitance Crss - 5.8 - - - 5 - - 20 VDS=25V, VGS=0V, f=1.0MHz pF Source-Drain Diode Ratings Continuous Source Current IS Pulsed Source Current ISP Diode Forward Voltage VSD IS=5A, VGS=0V - - 1.4 V Reverse Recovery Time trr IS=5A, VGS=0V, - 300 - ns Reverse Recovery Charge Qrr dIs/dt=100A/㎲ - 2.0 - μC VGS<Vth A Note 1) Repetivity rating : Pulse width limited by junction temperature. Note 2) L=14.5mH, IAS=5A, VDD=50V, RG=25Ω, Starting Tj=25℃. Note 3) IS≤5A, dI/dt≤100A/㎲, VDD≤BVDSS, Starting Tj=25℃. Note 4) Pulse Test : Pulse width ≤300㎲, Duty Cycle≤2%. Note 5) Essentially independent of operating temperature. Marking 2011. 3. 31 Revision No : 0 2/6 KF5N53F 2011. 3. 31 Revision No : 0 3/6 KF5N53F 2011. 3. 31 Revision No : 0 4/6 KF5N53F 2011. 3. 31 Revision No : 0 5/6 KF5N53F 2011. 3. 31 Revision No : 0 6/6