SEMICONDUCTOR KU086N10P/F TECHNICAL DATA N-ch Trench MOS FET General Description KU086N10P A This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converter, Synchronous Rectification and a load switch in battery powered applications O C F E DIM MILLIMETERS _ 0.2 9.9 + A G B 15.95 MAX 1.3+0.1/-0.05 _ 0.1 0.8 + _ 0.2 3.6 + _ 0.1 2.8 + 3.7 0.5+0.1/-0.05 1.5 _ 0.3 13.08 + B Q C I D E FEATURES K P ・VDSS= 100V, ID= 95A M F G L ・Drain-Source ON Resistance : H J RDS(ON)=8.6mΩ(Max.) @VGS = 10V I D J N H N MAXIMUM RATING (Tc=25℃) K 1.46 L _ 0.1 1.4 + _ 0.1 1.27 + _ 0.2 2.54 + _ 0.2 4.5 + _ 0.2 2.4 + _ 0.2 9.2 + M N RATING CHARACTERISTIC SYMBOL O UNIT 1 KU086N10P KU086N10F Drain-Source Voltage VDSS 100 V Gate-Source Voltage VGSS ±20 V Drain Power Dissipation Tc=25℃ IDP 400* KU086N10F 570 mJ EAR 7.1 mJ C A O E dv/dt Derate above 25℃ Storage Temperature Range A EAS PD Maximum Junction Temperature 32.5 F Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) 60 TO-220AB 4.5 B Pulsed (Note1) 50 Q V/ns 167 50 W 1.33 0.4 W/℃ Tj 150 ℃ Tstg -55 ~ 150 ℃ G @TC=100℃ 95 P 1. GATE 2. DRAIN 3. SOURCE L M R J Drain Current ID 3 K @TC=25℃ 2 D Thermal Characteristics RthJC Thermal Resistance, Junction-to-Ambient RthJA 0.75 2.5 62.5 N ℃/W * : Drain current limited by maximum junction temperature. N H ℃/W Q Thermal Resistance, Junction-to-Case 1 2 3 DIM MILLIMETERS A B C D E F G H J K L M N O Q R _ 0.2 10.16 + _ 0.2 15.87 + _ 0.2 2.54 + _ 0.1 0.8 + _ 0.1 3.18 + _ 0.1 3.3 + _ 0.2 12.57 + _ 0.1 0.5 + _ 0.5 13.0 + _ 0.1 3.23 + 1.47 MAX 1.47 MAX _ 0.2 2.54 + _ 0.2 6.68 + _ 0.2 4.7 + _ 0.2 2.76 + 1. GATE 2. DRAIN 3. SOURCE TO-220IS (1) PIN CONNECTION D G S 2011. 1. 20 Revision No : 0 1/7 KU086N10P/F ELECTRICAL CHARACTERISTICS (Tc=25℃) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT 100 - - V ID=5mA, Referenced to 25℃ - 0.09 - V/℃ Static BVDSS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient ID=250μA, VGS=0V ΔBVDSS/ΔTj Drain Cut-off Current IDSS VDS=100V, VGS=0V, - - 10 μA Gate Threshold Voltage Vth VDS=VGS, ID=250μA 2.0 - 4.0 V Gate Leakage Current IGSS VGS=±20V, VDS=0V - - ±100 nA RDS(ON) VGS=10V, ID=47.5A - 7.3 8.6 mΩ - 200 - - 35 - - 60 - - 120 - - 230 - - 520 - Drain-Source ON Resistance Dynamic Qg Total Gate Charge Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-on Delay time td(on) tr Turn-on Rise time td(off) Turn-off Delay time VDS=80V, ID=80A VGS=10V (Note4,5) VDD=50V ID=80A nC ns RG=25Ω (Note4,5) Turn-off Fall time tf - 200 - Input Capacitance Ciss - 8800 - Output Capacitance Coss - 630 - Reverse Transfer Capacitance Crss - 340 - - - 95 - - 380 VDS=25V, VGS=0V, f=1.0MHz pF Source-Drain Diode Ratings Continuous Source Current IS Pulsed Source Current ISP Diode Forward Voltage VSD IS=95A, VGS=0V - - 1.4 V Reverse Recovery Time trr IS=80A, VGS=0V, - 65 - ns Reverse Recovery Charge Qrr dIs/dt=300A/μs - 0.32 - μC VGS<Vth A Note 1) Repetivity rating : Pulse width limited by junction temperature. Note 2) L =70μH, IS=80A, VDD=80V, RG=25Ω, Starting Tj=25℃. Note 3) IS≤80A, dI/dt≤200A/㎲, VDD≤BVDSS, Starting Tj=25℃. Note 4) Pulse Test : Pulse width ≤ 300㎲, Duty Cycle ≤ 2%. Note 5) Essentially independent of operating temperature. Marking 1 KU 1 086N10P 001 2011. 1. 20 KU 086N10P 001 2 2 1 PRODUCT NAME 2 LOT NO Revision No : 0 2/7 KU086N10P/F Fig1. ID - VDS Fig2. ID - VGS 103 Drain Current ID (A) Drain Current ID (A) 103 VGS=5V VGS=7V, 10V 102 VGS=4.5V 101 100 10-2 10-1 100 101 VDS = 3V 102 100 C 101 100 102 2 3 4 3.0 1.3 VGS = 0V IDS = 5mA 1.1 1.0 0.9 0 100 50 150 2.5 1.5 1.0 0.5 0 -50 200 0 50 100 150 200 Drain Current ID (A) Fig6. IS - VSD - ௗ 103 Reverse Drain Current IS (A) 103 Reverse Drain Current IS (A) 8 2.0 Fig5. IS - VSD - 102 100 C 25 C 101 0.6 0.8 1.0 1.2 1.4 1.6 Source - Drain Voltage VSD (V) 2011. 1. 20 7 VGS=10V ID=47.5A Junction Temperature Tj ( C ) 100 0.4 6 Fig4. RDS(ON) - ID On - Resistance RDS(ON) (mΩ) Normalized Breakdown Voltage BVDSS Fig3. BVDSS - Tj 0.8 -50 5 Gate - Source Voltage VGS (V) Drain - Source Voltage VDS (V) 1.2 25 C Revision No : 0 1.8 2.0 VGS=7V, 10V 102 101 VGS=4V VGS=3V VGS=2V VGS=0V 100 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Source - Drain Voltage VSD (V) 3/7 KU086N10P/F Fig7. RDS(ON) - ID Fig8. ID- Tj On - Resistance RDS(ON) (mΩ) 20 120 Drain Current ID (A) 100 15 VGS=4.5V VGS=5V 10 VGS=10V 5 0 0 25 50 75 100 125 150 KU086N10P 80 60 KU086N10F 40 20 0 0 175 25 50 Fig 9. C - VDS Gate - Source Voltage VGS (V) Capacitance (pF) Ciss 103 Coss Crss Frequency=1MHz, VGS=0V 102 0 175 200 10 20 30 VDS=80V 10 8 6 4 2 0 0 40 40 Fig11. Safe Operation Area 1ms Operation in this area is limited by RDS(ON) 10ms DC 100 Tc= 25 C Single nonrepetitive pulse 10-1 100 Drain Current ID (A) 100us 101 Drain - Source Voltage VDS (V) Revision No : 0 200 240 (KU086N10F) 102 10us 102 100us 1ms 101 Operation in this area is limited by RDS(ON) 10ms DC 100 -1 101 150 103 10us 102 120 Fig12. Safe Operation Area (KU086N10P) 103 80 Gate - Charge Qg (nC) Drain - Source Voltage VDS (V) Drain Current ID (A) 150 12 104 2011. 1. 20 125 Fig10. Qg- VGS 105 10 100 Junction Temperature Tj ( ) Drain Current ID (A) -1 75 10 Tc= 25 C Single nonrepetitive pulse 10-1 100 101 102 Drain - Source Voltage VDS (V) 4/7 KU086N10P/F Transient Thermal Resistance Fig13. Transient Thermal Response Curve (KU086N10P) 100 Duty=0.5 0.2 PDM 0.1 10-1 t1 0.05 t2 0.02 0.01 - Duty Factor, D= t1/t2 Single Pulse 10-2 10-5 10-4 10-3 10-2 10-1 100 101 TIME (sec) Transient Thermal Resistance Fig14. Transient Thermal Response Curve (KU086N10F) 101 Duty=0.5 100 0.2 0.1 PDM 0.05 10-1 t1 0.02 0.01 t2 - Duty Factor, D= t1/t2 Single Pulse 10-2 10-5 10-4 10-3 10-2 10-1 100 101 TIME (sec) 2011. 1. 20 Revision No : 0 5/7 KU086N10P/F Fig15. Gate Charge VGS 10 V Fast Recovery Diode ID 0.8 VDSS ID 1.0 mA Q VDS Qgd Qgs Qg VGS Fig16. Single Pulsed Avalanche Energy 1 EAS= LIAS2 2 BVDSS BVDSS - VDD BVDSS L IAS 0.8źVDSS 25Ω ID(t) VDS VGS 10 V VDD VDS(t) Time tp Fig17. Resistive Load Switching VDS 90% RL 0.5 VDSS VGS 10% 25 Ω VDS 10V 2011. 1. 20 VGS Revision No : 0 td(on) ton tr td(off) tf toff 6/7 KU086N10P/F Fig18. Source - Drain Diode Reverse Recovery and dv /dt Body Diode Forword Current DUT VDS IF ISD (DUT) di/dt IRM IS 0.8 VDSS Body Diode Reverse Current VDS (DUT) driver Body Diode Recovery dv/dt VSD VDD 10V 2011. 1. 20 VGS Revision No : 0 Body Diode Forword Voltage drop 7/7