SEMICONDUCTOR KHB3D0N70P/F TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB3D0N70P A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switch mode power supplies. O C F E DIM MILLIMETERS _ 0.2 9.9 + A 15.95 MAX B 1.3+0.1/-0.05 C _ 0.1 D 0.8 + _ 0.2 E 3.6 + _ 0.1 F 2.8 + 3.7 G H 0.5+0.1/-0.05 1.5 I _ 0.3 13.08 + J K 1.46 _ 0.1 1.4 + L _ 0.1 1.27+ M _ 0.2 2.54 + N _ 0.2 4.5 + O _ 0.2 2.4 + P _ 0.2 9.2 + Q G B Q I FEATURES K P VDSS= 700V, ID= 3A M L Drain-Source ON Resistance : RDS(ON)= 3.5 J @VGS = 10V D N Qg(typ.) = 20.5nC 1 MAXIMUM RATING (Tc=25 H N 2 3 1. GATE 2. DRAIN 3. SOURCE ) RATING CHARACTERISTIC SYMBOL TO-220AB UNIT KHB3D0N70P KHB3D0N70F Drain-Source Voltage VDSS 700 V Gate-Source Voltage VGSS 30 V KHB3D0N70F C A Drain Current @TC=25 ID 3.0 3.0* Pulsed (Note1) IDP 12 12* Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Tc=25 O E 345 mJ EAR 8.0 mJ P dv/dt 4.0 V/ns K B G L Derate above25 Storage Temperature Range F EAS PD Maximum Junction Temperature A 137 50 1.04 0.34 Tj 150 Tstg -55 150 W W/ D M Thermal Characteristics N Thermal Resistance, Junction-to-Case RthJC 0.91 2.5 /W Thermal Resistance, Junction-toAmbient RthJA 62.5 62.5 /W Q J 1 M 2 H DIM MILLIMETERS _ 0.2 10.16 + A _ 0.2 15.87 + B _ 0.2 C 2.54 + _ 0.1 D 0.8 + _ 0.1 E 3.18 + _ 0.1 F 3.3 + _ 0.2 12.57 + G _ 0.1 0.5 + H J 13.0 MAX _ 0.1 K 3.23 + L 1.47 MAX _ 0.2 2.54 + M _ 0.2 N 4.7 + _ 0.2 O 6.68 + P 6.5 _ 0.2 Q 2.76 + 1. GATE 3 2. DRAIN 3. SOURCE TO-220IS * : Drain current limited by maximum junction temperature. D G S 2007. 1. 4 Revision No : 1 1/2 KHB3D0N70P/F ELECTRICAL CHARACTERISTICS (Tc=25 CHARACTERISTIC ) SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT 700 - - V - 1 - Static BVDSS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient BVDSS/ Tj ID=250 A, VGS=0V ID=250 A, Referenced to 25 V/ Gate Threshold Voltage Vth VDS=VGS, ID=250 A 2.0 - 4.0 V Drain Cut-off Current IDSS VDS=700V, VGS=0V, - - 10 A Gate Leakage Current IGSS VGS= 30V, VDS=0V - - 100 VGS=10V, ID=1.5A - 3.0 3.5 - 20.5 25.6 - 3 - RDS(ON) Drain-Source ON Resistance nA Dynamic Qg Total Gate Charge VDS=560V, ID=3.0A Gate-Source Charge Qgs Gate-Drain Charge Qgd - 10.5 - Turn-on Delay time td(on) - 11.5 33 - 48.5 107 - 50 110 tr Turn-on Rise time (Note4, 5) VDD=350V, RG=25 td(off) Turn-off Delay time VGS=10V ID=3.0A (Note4, 5) nC ns Turn-off Fall time tf - 57.5 125 Input Capacitance Ciss - 642 835 Output Capacitance Coss - 67.2 87.4 Reverse Transfer Capacitance Crss - 10.2 13.3 - - 3.0 - - 12 IS=3.0A, VGS=0V - - 1.6 V - 730 - ns - 3.2 - C VDS=25V, VGS=0V, f=1.0MHz pF Source-Drain Diode Ratings Continuous Source Current IS Pulsed Source Current ISP Diode Forward Voltage VSD Reverse Recovery Time trr IS=3.0A, VDD=350V, Reverse Recovery Charge Qrr dIs/dt=100A/ s VGS<Vth A (Note 4) Note 1) Repetivity rating : Pulse width limited by junction temperature. Note 2) L =71mH, IS=3.0A, VDD=50V, RG=25 , Starting Tj=25 . Note 3) IS 3.0A, dI/dt 200A/ Note 4) Pulse Test : Pulse width , VDD BVDSS, Starting Tj=25 300 , Duty Cycle . 2%. Note 5) Essentially independent of operating temperature. 2007. 1. 4 Revision No : 1 2/2