KEXIN 2SC4521

Transistors
SMD Type
NPN Epitaxial Planar Silicon Transistor
2SC4521
Features
Adoption of FBET, MBIT process.
Large current capacity.
Low collector-to-emitter saturation voltage.
Fast switching speed.
Small-sized package.
Absolute Maximum Ratings Ta = 25
Symbol
Rating
Unit
Collector-base voltage
Parameter
VCBO
60
V
Collector-emitter voltage
VCEO
45
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
3
A
Collector current (pulse)
ICP
6
A
Collector dissipation,mounted on ceramic
board(250mm2X0.8mm)
PC
1.5
W
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
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Transistors
SMD Type
2SC4521
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Collector cutoff current
ICBO
VCB = 45V, IE=0
Emitter cutoff current
IEBO
VEB = 2V, IC=0
DC current gain
hFE
VCE = 2V , IC = 500mA
fT
VCE = 2V , IC = 500mA
Cob
VCB = 10V , f = 1.0MHz
Gain bandwidth product
Output capacitance
Typ
100
Max
Unit
1
ìA
10
ìA
400
300
MHz
25
pF
Collector-emitter saturation voltage
VCE(sat) IC = 1.5 A , IB = 75 mA
0.25
0.7
V
Base-emitter saturation voltage
VBE(sat) IC = 1.5 V , IB = 75 mA
0.95
1.3
V
Collector-base breakdown voltage
V(BR)CBO IC = 10ìA , IE = 0
60
V
Collector-emitter breakdown voltage
V(BR)CEO IC = 1mA , RBE =
45
V
Emitter-base breakdown voltage
V(BR)EBO IE = 100ìA , IC = 0
5
V
Turn-on time
ton
50
100
ns
Storage time
tstg
150
270
ns
tf
180
350
ns
Fall time
hFE Classification
CL
Marking
2
Min
Rank
R
S
T
hFE
100 200
140 280
200 400
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