KEXIN 2SC4390

Transistors
SMD Type
NPN Epitaxial Planar Silicon Transistor
2SC4390
Features
Adoption of MBIT process.
High DC current gain (hFE=800 to 3200).
Large current capacity (IC=2A).
Low collector-to-emitter saturation voltage
(VCE(sat)
0.3V).
High VEBO (VEBO
15V).
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
20
V
Collector-emitter voltage
VCEO
10
V
Emitter-base voltage
VEBO
15
V
Collector current
IC
2
A
Collector current (pulse)
ICP
4
A
Base current
IB
0.4
A
Collector dissipation
PC
500
mW
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
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Transistors
SMD Type
2SC4390
Electrical Characteristics Ta = 25
Parameter
Testconditons
Min
Typ
Max
Unit
Collector cutoff current
ICBO
VCB = 15V, IE=0
0.1
ìA
Emitter cutoff current
IEBO
VEB = 10V, IC=0
0.1
ìA
DC current gain
hFE
VCE =2V , IC = 500mA
fT
VCE = 10V , IC = 50mA
260
MHz
Cob
VCB = 10V , f = 1.0MHz
280
pF
Gain bandwidth product
Output capacitance
Collector-emitter saturation voltage
Base-emitter saturation voltage
800
VCE(sat) IC = 1 A , IB = 20mA
VBE(sat) IC = 1 A , IB = 20mA
1500
3200
0.11
0.5
V
0.87
1.2
V
Collector-base breakdown voltage
V(BR)CBO IC = 10ìA , IE = 0
20
V
Collector-emitter breakdown voltage
V(BR)CEO IC = 1mA , RBE =
10
V
Emitter-base breakdown voltage
V(BR)EBO IE = 10ìA , IC = 0
15
V
Turn-on time
ton
0.13
ìs
Storage time
tstg
0.8
ìs
tf
0.1
ìs
Fall time
2
Symbol
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