KEXIN 2SC4695

Transistors
IC
SMD Type
NPN Epitaxial Planar Silicon Transistor
2SC4695
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
Features
0.4
3
High VEBO (VEBO
25V).
1
0.55
High DC current gain.
+0.1
1.3-0.1
+0.1
2.4-0.1
Adoption of FBET process.
2
+0.1
0.95-0.1
+0.1
1.9-0.1
High reverse hFE (150 typ).
+0.05
0.1-0.01
0-0.1
+0.1
0.38-0.1
+0.1
0.97-0.1
Small ON resistance [Ron=1W (IB=5mA)].
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
50
V
Collector-emitter voltage
VCEO
20
V
Emitter-base voltage
VEBO
25
V
Collector current
IC
500
mA
Collector current (pulse)
ICP
800
mA
Base current
IB
100
mA
Collector dissipation
PC
250
mW
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
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1
Transistors
IC
SMD Type
2SC4695
Electrical Characteristics Ta = 25
Max
Unit
Collector cutoff current
Parameter
Symbol
ICBO
VCB = 40V, IE=0
0.1
ìA
Emitter cutoff current
IEBO
VEB = 20V, IC=0
0.1
ìA
DC current gain
hFE
VCE = 5V , IC = 10mA
fT
VCE = 10V , IC = 10mA
250
MHz
Cob
VCB = 10V , f = 1.0MHz
3.6
pF
Gain bandwidth product
Output capacitance
Min
Typ
300
1200
Collector-emitter saturation voltage
VCE(sat) IC = 100mA , IB = 2mA
0.12
0.5
V
Base-emitter saturation voltage
VBE(sat) IC = 100mV , IB = 2mA
0.85
1.2
V
Collector-base breakdown voltage
V(BR)CBO IC = 10ìA , IE = 0
50
V
Collector-emitter breakdown voltage
V(BR)CEO IC = 1mA , RBE =
20
V
Emitter-base breakdown voltage
V(BR)EBO IE = 10ìA , IC = 0
25
V
Turn-on time
ton
135
ns
Storage time
tstg
450
ns
tf
100
ns
Fall time
Marking
Marking
2
Testconditons
WT
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