KEXIN 2SA1612

Transistors
SMD Type
PNP Silicon Epitaxial Transistor
2SA1612
Features
High DC current gain
1 Emitter
2 Base
3 Collector
Absolute Maximum Ratings Ta = 25
Symbol
Rating
Unit
Collector to base voltage
Parameter
VCBO
-120
V
Collector to emitter voltage
VCEO
-120
V
Emitter to base voltage
VEBO
-5
V
Collector current (DC)
IC
-50
mA
Total power dissipation
PT
150
mW
Tj
150
Tstg
-55 to +150
Junction temperature
Storage temperature range
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector cutoff current
ICBO
VCB = -120V, IE=0
-50
nA
Emitter cutoff current
IEBO
VEB = -5V, IC=0
-50
nA
DC current gain
hFE
135
VCE = -6V , IC = -0.1mA *
100
VCE(sat) IC = -10mA , IB = -1mA
Collector-emitter saturation voltage *
Base-emitter voltage
Gain bandwidth product
Output capacitance
*. PW
VCE = -6V , IC = -1mA
VBE
VCE = -6V , IC = -1mA
fT
VCE = -6V , IE = -1mA
Cob
VCB = -30V , IE = 0 , f = 1.0MHz
500
900
500
-0.09
-0.3
V
-0.55 -0.61 -0.65
V
50
90
2
MHz
3
pF
350ìs,duty cycle 2%
hFE Classification
Marking
C15
C16
C17
C18
hFE
135 270
200 400
300 600
450 900
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