Transistors IC SMD Type NPN Silicon Epitaxia 2SC3734 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 200ns. 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 High speed : tstg 0.4 3 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 60 V Collector-emitter voltage VCEO 40 V Emitter-base voltage VEBO 6 V IC 200 mA PT 200 mW Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Collector current Total power dissipation at 25 ambient temperature Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector cutoff current ICBO VCB = 30V, IE=0 100 nA Emitter cutoff current IEBO VEB = 3V, IC=0 100 nA DC current gain * hFE VCE = 1V , IC = 10mA 75 200 300 Collector-emitter saturation voltage * VCE(sat) IC = 50mA , IB = 5mA 0.12 0.3 V Base-emitter saturation voltage * VBE(sat) IC = 50mA , IB = 5mA 0.8 0.95 V Gain bandwidth product fT VCE = 20V , IE = -10mA Output capacitance Cob VCB = 5V , IE = 0 , f = 1.0MHz Turn-on time ton VCC = 3V , Storage time tstg IC = 10mA , Turn-off time toff IB1 = -IB2 = 1mA *. PW 300 510 3.0 100 MHz 4.0 pF 70 ns 200 ns 250 ns 350ìs,duty cycle 2% hFE Classification Marking B22 hFE 75 150 B23 100 200 B24 150 300 www.kexin.com.cn 1