KEXIN 2SK3652

Transistors
IC
SMD Type
N-channel Enhancement Mode MOSFET
2SK3652
1 .2 7 -0+ 0.1.1
TO-263
Features
Unit: mm
+0.1
1.27-0.1
+0.2
4.57-0.2
+0.1
0.81-0.1
2.54
2.54
+0.2
-0.2
+0.1
5.08-0.1
1 5 .2 5 -0+ 0.2.2
0.1max
+0.1
1.27-0.1
5 .2 8 -0+ 0.2.2
For high-speed switching
2 .5 4 -0+ 0.2.2
8 .7 -0+ 0.2.2
High avalanche resistance
5 .6 0
Low on-resistance, low Qg
+0.2
0.4-0.2
1 Gate
2 Drain
3 Source
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Drain-source surrender voltage
VDSS
230
V
Gate-source surrender voltage
VGSS
30
V
Drain current
ID
50
A
Peak drain current
IDP
200
A
Avalanche energy capability *
EAS
2 200
mJ
Power dissipation Ta = 25
PD
Power dissipation
3
W
100
Channel temperature
Tch
150
Storage temperature
Tstg
-55 to +150
* L = 1 mH, IL = 50 A, VDD = 100 V, 1 pulse, Ta = 25
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1
Transistors
IC
SMD Type
2SK3652
Electrical Characteristics Ta = 25
Parameter
Gate-drain surrender voltage
VDSS
Testconditons
ID = 1 mA, VGS = 0
Gate threshold voltage
Vth
VDS = 25 V, ID = 10 mA
Drain-source cutoff current
IDSS
VDS = 184 V, VGS = 0
Gate-source cutoff currentt
IGSS
VGS =
Drain-source on resistance
Forward transfer admittance
Min
2
29
17
Unit
V
30 V, VDS = 0
VDS = 25 V, ID = 25 A
Max
230
RDS(on) VGS = 10 V, ID = 25 A
Yfs
Typ
4
V
100
ìA
1
ìA
40
mÙ
35
S
5 950
pF
850
pF
80
pF
Short-circuit forward transfer capacitance
Ciss
Short-circuit output capacitance
Coss
Reverse transfer capacitance
Crss
Turn-on delay time
td(on)
65
ns
tr
140
ns
470
ns
Rise time
Turn-off delay time
Fall time
Diode foward voltage
td(off)
VDS = 25 V, VGS = 0, f = 1 MHz
VDD = 100 V, ID = 25 A,RL = 4 Ù,
VGS = 10 V
tf
VDSF
145
IDR = 50 A, VGS = 0
Reverse recovery time
trr
L = 230 ìH, VDD = 100 V
Reverse recovery charge
Qrr
IDR = 25 A, di/dt = 100 A/ìs
Total gate charge
Qg
Gate-source charge
Qgs
Gate-drain charge
2
Symbol
Qgd
VDD = 100 V, ID = 25 A,VGS = 10 V
ns
-1.5
235
V
ns
1 180
nC
105
nC
40
nC
14
nC
Channel-case heat resistance
Rth(ch-c)
1.25
/W
Channel-atmosphere heat resistance
Rth(ch-a)
41.6
/W
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