RoHS 1T Series RoHS SEMICONDUCTOR Standard TRIACs, 1A FEATURES On-state RMS current, l T(RMS) =1A Repetitive peak off-state voltage, V DRM /V RRM = 600 or 800V Triggering gate current, l GT (Q1) 3 to 25 mA APPLICATIONS The 1T series is suitable for general purpose AC switching applications. These devices are typically used in applications such as home appliances (electrovalve, pump, door lock, small lamp control), fan speed controllers,... A2 TO-92 (1TxxE) A1 G Different gate current sensitivities are available, allowing optimized performance when driven directly through microcontrollers MAIN FEATURES SYMBOL VALUE UNIT I T(RMS) 1 A V DRM /V RRM 600 to 800 V I GT(Q1) 3 to 25 mA ABSOLUTE MAXIMUM RATINGS PARAMETER RMS on-state current (full sine wave) Non repetitive surge peak on-state current (full cycle, T j initial = 25°C) SYMBOL IT(RMS) ITSM TEST CONDITIONS TO-92 Tc = 110ºC F =50 Hz t = 20 ms F =60 Hz t = 16.7 ms VALUE UNIT 1 A 16 17.6 I t 2 t p = 10 ms Critical rate of rise of on-state current l G = 2xl GT , t r≤100ns dI/dt F =100 Hz Peak gate current IGM T p =20 µs PG(AV) T j =125ºC 1 Peak gate power dissipation PGM T j =125ºC 5 Stroage temperature range Tstg - 40 to + 150 Tj - 40 to + 125 l 2 t Value for fusing Average gate power dissipation A 1.28 A2s T j =125ºC 50 A/µs T j =125ºC 1 A W ºC Operating junction temperature range www.nellsemi.com Page 1 of 5 RoHS 1T Series RoHS SEMICONDUCTOR ELECTRICAL CHARACTERISTICS (TJ= 25 ºC unless otherwise specified) Standard (4 quadrants) 1Txxxx TEST CONDITIONS SYMBOL QUADRANT I - II - III IGT(1) V D = 12 V, R L = 30Ω IV VGT VGD V D = V DRM , R L = 3.3KΩ, T j = 125°C IH(2) I T = 50 mA IL I G = 1.2 I GT dV/dt(2) (dV/dt)c(2) MAX. UNIT T D S A 3 5 10 25 5 10 10 25 mA ALL 1.3 V ALL 0.2 V MAX. I - III - IV II MAX. 7 10 10 25 7 10 15 25 15 20 25 50 mA mA V D = 67% V DRM , gate open, T j = 110°C MIN. 10 20 50 100 V/µs (dI/dt)c = 0.44 A/ms, T j = 110°C MIN. 0.5 1 2 5 V/µs STATIC CHARACTERISTICS SYMBOL TEST CONDITIONS VALUE VTM(2) I TM = 2A, t P = 380 µs T j = 25°C MAX. 1.50 VTO(2) Threshold voltage T j = 125°C MAX. 0.95 RD(2) Dynamic resistance T j = 125°C MAX. 400 IDRM IRRM VD = VDRM VR = VRRM T j = 25°C UNIT V mΩ 5 µA MAX. T j = 125°C 500 Note 1: Minimum lGT is guaranted at 5% of lGT max. Note 2: For both polarities of A2 referenced to A1. THERMAL RESISTANCE VALUE SYMBOL Rth(j-c) Junction to case (AC) Rth(j-a) Junction to ambient 60 TO-92 TO-92 150 UNIT °C/W PRODUCT SELECTOR VOLTAGE (x x) PART NUMBER SENSITIVITY TYPE PACKAGE V 3 mA Standard TO-92 V V 5 mA Standard TO-92 V V V 10 mA Standard TO-92 V V V 25 mA Standard TO-92 600 V 800 V 1000 V 1TxxE-T V V 1TxxE-D V 1TxxE-S 1TxxE-A ORDERING INFORMATION ORDERING TYPE MARKING PACKAGE WEIGHT BASE Q,TY DELIVERY MODE 1TxxE-y 1TxxE-y TO-92 0.2g 500 Bag Note: xx = voltage, y = sensitivity www.nellsemi.com Page 2 of 5 RoHS 1T Series RoHS SEMICONDUCTOR ORDERING INFORMATION SCHEME E - T 06 1 D Current 1 = 1A Triac series Voltage 06 = 600V 08 = 800V Package type E = TO-92 IGT Sensitivity T = 3mA Standard D = 5mA Standard S = 10mA Standard A = 25mA Standard Fig.2 On-state RMS current versus lead (TO-92) or tab (SOT-223, SMBflat-3L) temperature (full cycle) Fig.1 Maximum power dissipation versus on-state RMS current (full cycle) P (W) IT(RMS) (A) 1.50 1.2 1.25 1.0 1.00 0.8 0.75 0.6 TO-92 0.4 0.50 180° I T(RMS) (A) 0.25 α 0.2 T l or T tab (°C) α 0.00 0.0 0.0 0.1 0.2 0.3 0.5 0.4 0.6 0.7 0.8 0.9 1.0 0 Fig.3 On-state RMS current versus ambient temperature (free air convection full cycle) 25 75 50 100 125 Fig.4 Relative variation of thermal impedance versus pulse duration (Z th(j-a) ). K=[Zth(j-a)/Rth(j-a)] IT(RMS) (A) 1.2 1.00 1.0 0.8 TO-92 R th(j-a) = 150°C/W (TO-92) 0.6 0.10 0.4 0.2 0.0 Tamb(°C) 0 25 www.nellsemi.com 50 75 100 125 Page 3 of 5 0.01 1E-3 t P (s) 1E-2 1E-1 1E+0 1E+1 1E+2 1E+3 RoHS 1T Series RoHS SEMICONDUCTOR Fig.5 Relative variation of holding current and latching current versus junction temperature (typ. values) Fig.6 Relative variation of gate trigger current (l GT ) and voltage(V GT ) versus junction temperature l H ,l L [T j ] / l H ,l L [T j =25°C] 2.5 l GT ,V GT [T j ] / l GT ,V GT [T j =25°C] 3.0 l GT Q1-Q2 2.5 2.0 l GT Q3 2.0 1.5 l GT Q4 1.5 1.0 0.5 T j (°C) 0.0 -50 -25 0 25 50 lL 1.0 lH 0.5 V GT Q1-Q2-Q3-Q4 75 100 0.0 -50 125 Fig.7 Surge peak on-state current versus number of cycles 25 0 50 100 75 125 Fig.8 Non-repetitive surge peak on-state current and corresponding value of l 2 t sinusoidal pulse width l TSM (A) 9 -25 l TSM (A), l 2 t(A 2 s) 100 T j initial = 25°C 8 dl/dt limitation: 20A/µs t=20ms 7 One cycle Non repetitive Tj initial=25°C 6 l TSM 20 5 4 Repetitive Tamb=95°C 3 10 2 1 Number of cycles 0 10 1 100 1000 Fig.9 On-state characteristics (maximum values) (l TM = f(V TM )) l 2t t P (ms) 1 0.01 0.10 1.00 10.00 Fig.10 Relative variation of critical rate of decrease of main current versus (dV/dt)c l TM (A) (dI/dt)c [(dV/dt)c] / Specified (dI/dt)c 2.6 10.0 2.4 2.2 2.0 1.8 1.6 1.4 T j = T j max. 1.0 1.2 1.0 T j = 25°C V TM (V) 0.1 0.0 0.5 1.0 1.5 2.0 2.5 0.8 T j = max. V to = 0.95V R d = 400mΩ 3.0 3.5 4.0 4.5 0.6 D 0.2 5.0 Fig.11 Relative variation of critical rate of decrease of main current (dl/dt) versus junction temperature A (dV/dt)c (V/µs) 0.0 0.1 1.0 10.0 100.0 Fig.12 Relative variation of static dV/dt immunity versus junction temperature (gate open) (dl/dt)c [T j ] / (dl/dt)c [T j Specified] (dV/dt)c [T j ] / (dV/dt)c [T j = 125°C] 6 6 5 5 4 4 3 3 2 2 1 V D =V R =402V 1 T j (°C) 0 S T 0.4 0 25 www.nellsemi.com 50 T j (°C) 75 100 125 Page 4 of 5 0 25 50 75 100 125 RoHS 1T Series RoHS SEMICONDUCTOR Case Style RoHS TO-92 Ø 5.20(0.205) 4.45(0.175) 5.33(0.210) 4.58(0.180) 1 2 3 0.50(0.020) 0.40(0.016) 12.70(0.500)Min. 0.50(0.020) 0.40(0.016) 0.50(0.020) 0.40(0.016) 1.40(0.055) 1.14(0.045) 1.40(0.055) 1.14(0.045) 4.20(0.165) 3.20(0.126) www.nellsemi.com Page 5 of 5