2SC5099 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1907) V IEBO VEB=6V 10max µA 6 V V(BR)CEO IC=50mA 80min V 6 A hFE VCE=4V, IC=2A 50min∗ IB 3 A VCE(sat) IC=2A, IB=0.2A 0.5max V PC 60(Tc=25°C) W fT VCE=12V, IE=–0.5A 20typ MHz Tj 150 °C COB VCB=10V, f=1MHz 110typ pF –55 to +150 °C ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) tf (µs) 30 10 3 10 –5 0.3 –0.3 0.16typ 2.60typ 0.34typ I B =10mA 0 1 0 2 3 1 I C =6A 4A 0 4 0 0.5 1.0 h FE – I C Temperature Characteristics (Typical) (V C E =4V) 300 200 D C Cur r ent Gai n h F E Typ 50 1 100 25˚C –30˚C 50 20 0.02 56 0.1 Collector Current I C (A) 1 0.5 2 1 56 θ j-a – t Characteristics 5 1 0.5 0.3 1 10 100 1000 2000 Time t(ms) Collector Current I C (A) f T – I E Characteristics (Typical) Safe Operating Area (Single Pulse) P c – T a Derating (V C E =12V) 20 60 10 si nk Without Heatsink Natural Cooling at 0.5 he 1 40 ite Collect or Cur ren t I C (A) s DC fin 10 s ms In 20 0m 1m ith Typ 5 10 W 30 10 Maxim um Power Dissip ation P C (W) 40 Cut-o ff F requ ency f T (MH Z ) DC C urrent G ain h FE 125˚C 0.5 0 Base-Emittor Voltage V B E (V) (V C E =4V) 0.1 0 1.5 Base Current I B (A) h FE – I C Characteristics (Typical) 30 0.02 2 2A Collector-Emitter Voltage V C E (V) 100 e Te mp e Tem ) p) 20mA 2 E 4 Cas 30mA 2 ˚C ( 50 mA 4 C Weight : Approx 6.5g a. Part No. b. Lot No. (V CE =4V) 125 8 3.35 1.5 6 Collector Current I C (A) 10 0mA θ j- a ( ˚C/W) 15 A 0m 4.4 I C – V BE Temperature Characteristics (Typical) 3 Transient Thermal Resistance 0m A 0.65 +0.2 -0.1 5.45±0.1 B V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) Collector Current I C (A) 20 0m 0.8 2.15 1.5 RL (Ω) A 1.75 1.05 +0.2 -0.1 VCC (V) I C – V CE Characteristics (Typical) 3.45 ±0.2 ø3.3±0.2 a b 5.45±0.1 ■Typical Switching Characteristics (Common Emitter) 6 5.5±0.2 3.0 23.0±0.3 15.6±0.2 16.2 Tstg 0.8±0.2 µA 5.5 IC 10max 1.6 VEBO VCB=120V 3.3 80 ICBO ) VCEO Unit Temp V Ratings (Case 120 External Dimensions FM100(TO3PF) (Ta=25°C) Conditions –30˚C VCBO Symbol (Cas Unit 25˚C Ratings 9.5±0.2 ■Electrical Characteristics ■Absolute maximum ratings (Ta=25°C) Symbol Application : Audio and General Purpose 20 Without Heatsink 0 –0.02 0.1 –0.1 –1 Emitter Current I E (A) 126 –6 5 10 50 Collector-Emitter Voltage V C E (V) 100 3.5 0 0 25 50 75 100 Ambient Temperature Ta(˚C) 125 150