SANKEN 2SC5100_01

2SC5100
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1908)
hFE
IB
3
A
VCE(sat)
PC
75(Tc=25°C)
W
fT
150
°C
COB
°C
∗hFE Rank
Tj
Tstg
–55 to +150
V
120min
IC=50mA
VCE=4V, IC=3A
50min∗
IC=3A, IB=0.3A
0.5max
V
VCE=12V, IE=–0.5A
20typ
MHz
VCB=10V, f=1MHz
200typ
pF
VBB1
(V)
VBB2
(V)
IB1
(A)
IB2
(A)
ton
(µs)
tstg
(µs)
tf
(µs)
40
10
4
10
–5
0.4
–0.4
0.13typ
3.50typ
0.32typ
I B =10mA
0
0
1
2
3
1
0
4
0
0.2
0.4
2A
0.6
0.8
0
1.0
0.5
(V C E =4V)
200
Typ
50
1
5
100
25˚C
–30˚C
50
20
0.02
8
Transient Thermal Resistance
DC Curr ent Gain h FE
125˚C
100
0.1
Collector Current I C (A)
0.5
1.5
1
5
8
4
1
0.5
0.2
1
10
100
1000 2000
Time t(ms)
Collector Current I C (A)
f T – I E Characteristics (Typical)
1.0
θ j-a – t Characteristics
h FE – I C Temperature Characteristics (Typical)
200
Safe Operating Area (Single Pulse)
P c – T a Derating
(V C E =12V)
80
20
40
10
he
at
40
si
nk
Collecto r Cur ren t I C (A)
ite
Without Heatsink
Natural Cooling
fin
0.5
In
1
60
ith
10
s
20
0m
DC
5
Typ
s
10
m
30
W
Ma xim um Powe r Dissipation P C ( W)
10
Cut -off Fre quen cy f T (MH Z )
DC C urrent G ain h FE
0
Base-Emittor Voltage V B E (V)
(V C E =4V)
0.5
mp)
4A
Base Current I B (A)
h FE – I C Characteristics (Typical)
0.1
2
I C =8A
Collector-Emitter Voltage V C E (V)
20
0.02
4
e Te
20mA
2
6
Cas
4
2
˚C (
50m A
E
(V C E =4V)
125
6
C
Weight : Approx 6.5g
a. Part No.
b. Lot No.
8
Collector Current I C (A)
75 m A
3.35
1.5
I C – V BE Temperature Characteristics (Typical)
θ j- a ( ˚C/W)
1
A
00m
4.4
B
3
Collector-Emitter Saturation Voltage V C E (s at) (V )
A
A
0m
20
350m
Collector Current I C (A)
15
V CE ( sat ) – I B Characteristics (Typical)
0.65 +0.2
-0.1
5.45±0.1
1.5
IC
(A)
I C – V CE Characteristics (Typical)
0.8
2.15
1.05 +0.2
-0.1
RL
(Ω)
A
1.75
5.45±0.1
VCC
(V)
0m
ø3.3±0.2
a
b
O(50 to 100), P(70 to 140), Y(90 to 180)
■Typical Switching Characteristics (Common Emitter)
8
3.45 ±0.2
3.0
V(BR)CEO
A
0.8±0.2
V
8
µA
5.5
6
IC
10max
5.5±0.2
1.6
VEBO
VEB=6V
15.6±0.2
)
IEBO
µA
Temp
V
10max
(Case
120
VCB=160V
–30˚C
VCEO
Conditions
mp)
ICBO
e Te
V
(Cas
160
Unit
25˚C
Unit
VCBO
External Dimensions FM100(TO3PF)
(Ta=25°C)
Ratings
3.3
Symbol
9.5±0.2
■Electrical Characteristics
Ratings
23.0±0.3
Symbol
16.2
■Absolute maximum ratings (Ta=25°C)
Application : Audio and General Purpose
20
Without Heatsink
0
–0.02
–0.1
–1
Emitter Current I E (A)
–8
0.1
5
10
50
100
Collector-Emitter Voltage V C E (V)
150
3.5
0
0
25
50
75
100
125
150
Ambient Temperature Ta(˚C)
127