SMG2328NE 6.3 A, 20 V, RDS(ON) 22 m N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SC-59 DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers,PCMCIA cards, cellular and cordless telephones. A L 3 3 C B Top View 1 1 K 2 E 2 D FEATURES F Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SC-59 saves board space. Fast switching speed. High performance trench technology. REF. A B C D E F PACKAGE INFORMATION Package MPQ LeaderSize SC-59 3K 7’ inch G Millimeter Min. Max. 2.70 3.10 2.25 3.00 1.30 1.70 1.00 1.40 1.70 2.30 0.35 0.50 H REF. G H J K L J Millimeter Min. Max. 0.10 REF. 0.40 REF. 0.10 0.20 0.45 0.55 0.85 1.15 ESD Protection Diode 2KV ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 1 VDS VGS TA=25°C TA=70°C Pulsed Drain Current 2 Continuous Source Current (Diode Conduction) 1 TA=25°C Power Dissipation 1 TA=70°C Operating Junction and Storage Temperature Range ID IDM IS PD TJ, TSTG 20 ±8 6.3 5.2 20 1.6 1.3 0.9 -55 ~ 150 Unit V V A A A W °C Thermal Resistance Data Maximum Junction to Ambient 1 t≦5 sec Steady-State RθJA 100 166 °C/W Notes: 1. Surface Mounted on 1” x 1” FR4 Board. 2. Pulse width limited by maximum junction temperature. http://www.SeCoSGmbH.com/ 05-Jan-2011 Rev. A Any changes of specification will not be informed individually. Page 1 of 2 SMG2328NE 6.3 A, 20 V, RDS(ON) 22 m N-Channel Enhancement MOSFET Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Symbol Min Typ Max Unit Test Conditions Static Gate-Threshold Voltage VGS(th) 0.4 - - V VDS = VGS, ID = 250μA Gate-Body Leakage IGSS - - ±100 nA VDS = 0V, VGS= ±8V Zero Gate Voltage Drain Current IDSS - - 1 - - 10 On-State Drain Current 1 ID(ON) 10 - - - - 22 - - 26 Drain-Source On-Resistance 1 RDS(ON) μA A mΩ VDS = 16V, VGS= 0V VDS = 16V, VGS= 0V, TJ=55°C VDS = 5V, VGS= 4.5V VGS= 4.5V, ID = 6.5A VGS= 2.5V, ID = 5.8A Forward Transconductance 1 gFS - 11.3 - S VDS= 10V,,ID = 6.5A Diode Forward Voltage VSD - 0.75 - V IS= 1.6A, VGS= 0V Dynamic 2 Total Gate Charge Qg - 13.4 - Gate-Source Charge Qgs - 0.9 - Gate-Drain Charge Qgd - 2.0 - Turn-On Delay Time Td(ON) - 8 - Tr - 24 - Td(OFF) - 35 - Tf - 10 - Rise Time Turn-Off Delay Time Fall Time nC ID= 6.5A VDS= 10V VGS= 4.5V nS ID= 1A, VDD= 10V VGEN= 4.5V RL= 15Ω Notes: 1. Pulse test：PW ≦ 300 us duty cycle ≦ 2%. 2. Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ 05-Jan-2011 Rev. A Any changes of specification will not be informed individually. Page 2 of 2