SSG4543C N-Ch: 6.5 A, 40 V, RDS(ON) 32 m P-Ch: -7.6 A, -40 V, RDS(ON) 30 m N & P-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION SOP-8 These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers,. printers, PCMCIA cards, cellular and cordless telephones B L M A C N FEATURES D J Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SOP-8 saves board space Fast switching speed High performance trench technology H MPQ LeaderSize SOP-8 2.5K 13’ inch Millimeter Min. Max. 5.8 6.20 4.80 5.00 3.80 4.00 0° 8° 0.50 0.93 0.19 0.25 1.27 TYP. REF. A B C D E F G PACKAGE INFORMATION Package G K F REF. H J K L M N E Millimeter Min. Max. 0.35 0.51 0.375 REF. 45° 1.35 1.75 0.10 0.25 0.25 REF. MAXIMUM RATINGS (TA = 25°C unless otherwise specified) PARAMETER SYMBOL N-CH P-CH Unit Drain-Source Voltage VDS 40 -40 V Gate-Source Voltage VGS 20 -20 V ID @ TA = 25°C 6.5 -7.6 A ID @ TA = 70°C 5.5 -6.3 A IDM ±50 ±50 A IS 2.3 -2.1 A PD @ TA = 25°C 2.1 2.1 W PD @ TA = 70°C 1.3 1.3 W Continuous Drain Current 1 Pulsed Drain Current 2 Continuous Source Current (Diode Conduction) 1 Total Power Dissipation 1 Operating Junction & Storage Temperature Range TJ, TSTG -55 ~ 150 °C 62.5 °C / W 110 °C / W Thermal Resistance Ratings Maximum Junction-to-Ambient 1 t≦ 10 sec Steady State RθJA Notes 1. Surface Mounted on 1” x 1” FR4 Board. 2. Pulse width limited by maximum junction temperature. http://www.SeCoSGmbH.com/ 27-Dec-2010 Rev. C Any changes of specification will not be informed individually. Page 1 of 6 SSG4543C N-Ch: 6.5 A, 40 V, RDS(ON) 32 m P-Ch: -7.6 A, -40 V, RDS(ON) 30 m N & P-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Ch Min. Typ. Max. Unit Teat Conditions Static Gate Threshold Voltage VGS(th) Gate-Body Leakage Current IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Current 1 ID(on) N 1 - - P -1 - - N - - ±100 P N - - ±100 1 P - - -1 N 25 - - P -50 - - - - 32 - - 42 30 N Drain-Source On-Resistance 1 RDS(ON) P Forward Transconductance 1 gfs - - 40 N - 40 - P - 31 - V nA μA A VDS= VGS, ID= 250μA VDS= VGS, ID= -250μA VDS= 0V, VGS= 20V VDS= 0V, VGS= -20V VDS= 32V, VGS= 0V VDS= -32V, VGS= 0V VDS= 5V, VGS= 10V VDS= -5V, VGS= -10V VGS= 10V, ID= 6.5A mΩ VGS= 4.5V, ID= 5.7A VGS= -10V, ID= -7.6A VGS= -4.5V, ID= -6.2A S VDS= 15V, ID= 6.5A VDS= -15V, ID= -7.6A Dynamic 2 Total Gate Charge Gate-Source Charge Qg Qgs Gate-Drain Charge Qgd Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Td(on) Tr Td(off) Tf N - 13 - P - 14 - N P - 3.3 5.8 - N - 4.5 - P - 12 - N - 440 - P - 1800 - N - 80 - P N - 280 130 - P - 150 - N - 20 - P - 15 - N - 9 - P N - 16 70 - P - 62 - N - 20 - P - 46 - nC pF nS N-Channel ID= 6.5A, VDS= 15V, VGS= 4.5V P-Channel ID= -7.6A, VDS= -15V, VGS= -4.5V N-Channel VDS= 15V, VGS= 0V, f= 1MHz P-Channel VDS= -15V, VGS= 0V, f= 1MHz N-Channel VDD= 15V, VGS= 10V ID= 1A, RGEN= 25Ω P-Channel VDD= -15V, VGS= -10V ID= -1A, RGEN= 15Ω Notes 1. Pulse test：PW ≦ 300μs duty cycle ≦ 2%. 2. Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ 27-Dec-2010 Rev. C Any changes of specification will not be informed individually. Page 2 of 6 SSG4543C Elektronische Bauelemente N-Ch: 6.5 A, 40 V, RDS(ON) 32 m P-Ch: -7.6 A, -40 V, RDS(ON) 30 m N & P-Ch Enhancement Mode Power MOSFET CHARACTERISTIC CURVES (N-Channel) http://www.SeCoSGmbH.com/ 27-Dec-2010 Rev. C Any changes of specification will not be informed individually. Page 3 of 6 SSG4543C Elektronische Bauelemente N-Ch: 6.5 A, 40 V, RDS(ON) 32 m P-Ch: -7.6 A, -40 V, RDS(ON) 30 m N & P-Ch Enhancement Mode Power MOSFET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 27-Dec-2010 Rev. C Any changes of specification will not be informed individually. Page 4 of 6 SSG4543C Elektronische Bauelemente N-Ch: 6.5 A, 40 V, RDS(ON) 32 m P-Ch: -7.6 A, -40 V, RDS(ON) 30 m N & P-Ch Enhancement Mode Power MOSFET CHARACTERISTIC CURVES (P-Channel) http://www.SeCoSGmbH.com/ 27-Dec-2010 Rev. C Any changes of specification will not be informed individually. Page 5 of 6 SSG4543C Elektronische Bauelemente N-Ch: 6.5 A, 40 V, RDS(ON) 32 m P-Ch: -7.6 A, -40 V, RDS(ON) 30 m N & P-Ch Enhancement Mode Power MOSFET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 27-Dec-2010 Rev. C Any changes of specification will not be informed individually. Page 6 of 6