SECOS SSG4920N

SSG4920N
6.9 A, 30 V, RDS(ON) 34 m
Dual N-Channel Mode Power MOSFET
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
SOP-8
These miniature surface mount MOSFETs utilize high cell density process
Low RDS(on) assures minimal power loss and conserves energy, making
this device ideal for use in power management circuitry. Typical applications
are PWMDC-DC converters, power management in portable and batterypowered products such as computers, printers, battery charger,
telecommunication power system, and telephones power system.
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L
D
M
A
FEATURES




N
Low RDS(on) provides higher efficiency and extends battery life.
Miniature SOP-8 surface mount package saves board space.
High power and current handling capability.
Low side high current DC-DC Converter applications.
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PRODUCT SUMMARY
VDS(V)
30
REF.
SSG4920N
RDS(on) m(
[email protected]=10V
[email protected]=4.5V
C
A
B
C
D
E
F
G
ID(A)
6.9
6.0
PACKAGE INFORMATION
G
Millimeter
Min.
Max.
5.80
6.20
4.80
5.00
3.80
4.00
0°
8°
0.40
0.90
0.19
0.25
1.27 TYP.
K
E
F
REF.
H
J
K
L
M
N
Millimeter
Min.
Max.
0.35
0.49
0.375 REF.
45°
1.35
1.75
0.10
0.25
0.25 REF.
S
D
Package
MPQ
LeaderSize
G
D
SOP-8
2.5K
13’ inch
S
D
G
D
MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDS
30
V
Gate-Source Voltage
VGS
±20
V
ID @ TA = 25°C
±6.9
A
ID @ TA = 70°C
±5.6
A
IDM
±40
A
IS
1.7
A
PD @ TA = 25°C
2.1
W
Continuous Drain Current 1
Pulsed Drain Current
2
Continuous Source Current (Diode Conduction) 1
Total Power Dissipation 1
Operating Junction & Storage Temperature Range
PD @ TA = 70°C
1.3
W
TJ, TSTG
-55 ~ 150
°C
62.5
°C / W
110
°C / W
THERMAL RESISTANCE RATINGS
Thermal Resistance Junction-Ambient (Max.) 1
t ≦ 10 sec
Steady State
RθJA
Notes
1
Surface Mounted on 1” x 1” FR4 Board.
2
Pulse width limited by maximum junction temperature.
http://www.SeCoSGmbH.com/
22-Nov-2010 Rev. A
Any changes of specification will not be informed individually.
Page 1 of 4
SSG4920N
6.9 A, 30 V, RDS(ON) 34 m
Dual N-Channel Mode Power MOSFET
Elektronische Bauelemente
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITIONS
STATIC
Gate Threshold Voltage
VGS(th)
1
-
-
V
VDS= VGS, ID= 250μA
Gate-Body Leakage Current
IGSS
-
-
±100
nA
VDS= 0V, VGS= ±20V
Zero Gate Voltage Drain Current
IDSS
-
-
1
μA
VDS= 24V, VGS= 0V
-
-
10
μA
VDS= 24V, VGS= 0V, TJ= 55°C
20
-
-
A
-
-
34
-
-
41
On-State Drain Current
1
ID(on)
Drain-Source On-Resistance 1
Forward Transconductance
Diode Forward Voltage
1
RDS(ON)
mΩ
VDS= 5V, VGS= 10V
VGS= 10V, ID= 6.9A
VGS= 4.5V, ID= 6.0A
gfs
-
25
-
S
VDS= 15V, ID= 6.9A
VSD
-
0.77
-
V
IS= 1.7A, VGS= 0V
DYNAMIC 2
Total Gate Charge
Qg
-
4.0
-
Gate-Source Charge
Qgs
-
1.1
-
Gate-Drain Charge
Qgd
-
1.4
-
Turn-On Delay Time
Td(on)
-
12
-
Tr
-
10
-
Td(off)
-
60
-
Tf
-
15
-
Trr
-
50
-
Rise Time
Turn-Off Delay Time
Fall Time
Source-Ddrain Reverse
Recovery Time
nC
nS
ID= 6.9A
VDS= 15V
VGS= 4.5V
VDD= 15V
ID= 1A
VGEN= 10V
RL= 15Ω
IF=1.7A, Di / Dt = 100A/μs
Notes
1
Pulse test:PW ≦ 300μs duty cycle ≦ 2%.
2
Guaranteed by design, not subject to production testing.
http://www.SeCoSGmbH.com/
22-Nov-2010 Rev. A
Any changes of specification will not be informed individually.
Page 2 of 4
SSG4920N
Elektronische Bauelemente
6.9 A, 30 V, RDS(ON) 34 m
Dual N-Channel Mode Power MOSFET
TYPICAL ELECTRICAL CHARACTERISTICS
http://www.SeCoSGmbH.com/
22-Nov-2010 Rev. A
Any changes of specification will not be informed individually.
Page 3 of 4
SSG4920N
Elektronische Bauelemente
6.9 A, 30 V, RDS(ON) 34 m
Dual N-Channel Mode Power MOSFET
TYPICAL ELECTRICAL CHARACTERISTICS
http://www.SeCoSGmbH.com/
22-Nov-2010 Rev. A
Any changes of specification will not be informed individually.
Page 4 of 4