SSG4935P P-Ch Enhancement Mode Power MOSFET -7.8 A, -30 V, RDS(ON) 21 m Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs utilize high cell density process. Low RDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are PWMDC-DC converters, power management in portable and battery-powered products such as computers, printers, battery charger, telecommunication power system, and telephones power system. SOP-8 B L D M A C N FEATURES J Low RDS(on) provides higher efficiency and extends battery life. Miniature SOP-8 surface mount package saves board space. High power and current handling capability.. Extended VGS range (±25) for battery pack applications. H REF. A B C D E F G PRODUCT SUMMARY VDS(V) -30 PRODUCT SUMMARY RDS(on) (m 21@VGS= -10V 35@VGS= -4.5V ID(A) -7.8 -6.0 S D G D S D G D G K F Millimeter Min. Max. 5.80 6.20 4.80 5.00 3.80 4.00 0° 8° 0.40 0.90 0.19 0.25 1.27 TYP. REF. H J K L M N E Millimeter Min. Max. 0.35 0.49 0.375 REF. 45° 1.35 1.75 0.10 0.25 0.25 REF. MAXIMUM RATINGS (TA = 25°C unless otherwise specified) PARAMETER Drain-Source Voltage Gate-Source Voltage UNIT -30 V VGS ±25 V -7.8 A ID @ TA = 70°C -6.2 A IDM ±30 A IS -1.7 A PD @ TA = 25°C 2.0 W Pulsed Drain Current b a Total Power Dissipation a RATINGS VDS ID @ TA = 25°C Continuous Drain Current a Continuous Source Current (Diode Conduction) SYMBOL PD @ TA = 70°C 1.3 W TJ, TSTG -55 ~ 150 °C 62.5 °C / W 110 °C / W Operating Junction & Storage Temperature Range THERMAL RESISTANCE RATINGS Thermal Resistance Junction-ambient (Max.) a t≦10 sec Steady State RθJA Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature. http://www.SeCoSGmbH.com/ 25-Aug-2010 Rev. A Any changes of specification will not be informed individually. Page 1 of 4 SSG4935P P-Ch Enhancement Mode Power MOSFET -7.8 A, -30 V, RDS(ON) 21 m Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) PARAMETER SYMBO MIN. TYP. MAX. UNIT TEST CONDITIONS STATIC Gate Threshold Voltage Gate-Body Leakage Current Zero Gate Voltage Drain Current On-State Drain Current a Drain-Source On-Resistance a VGS(th) -1 - -3 V VDS= VGS, ID= -250μA IGSS - - ±100 nA VDS= 0V, VGS= ±25V - - -1 μA VDS= -24V, VGS= 0V - - -5 μA VDS= -24V, VGS= 0V, TJ=55°C -40 - - A VDS= -5V, VGS= -10V - 19 21 IDSS ID(on) RDS(ON) VGS= -10V, ID= -7.8A mΩ - 28 35 VGS= -4.5V, ID= -6.0A Forward Transconductance a gfs - 22 - S VDS= -10V, ID= -7.8A Diode Forward Voltage VSD - -0.7 -1.2 V IS= -1.7A, VGS= 0V DYNAMIC b Total Gate Charge Qg - 15 - Gate-Source Charge Qgs - 5.2 - Gate-Drain Charge Qgd - 5.8 - VGS= -5V Turn-On Delay Time Td(on) - 15 - VDD= -15V Tr - 12 - Rise Time ID= -7.8A nC VDS= -15V ID= -1A nS Turn-Off Delay Time Fall Time Td(off) - 62 - VGEN= -10V Tf - 46 - RL= 6Ω Notes a. Pulse test：PW ≦ 300μs duty cycle ≦ 2%. b. Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ 25-Aug-2010 Rev. A Any changes of specification will not be informed individually. Page 2 of 4 SSG4935P Elektronische Bauelemente P-Ch Enhancement Mode Power MOSFET -7.8 A, -30 V, RDS(ON) 21 m CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 25-Aug-2010 Rev. A Any changes of specification will not be informed individually. Page 3 of 4 SSG4935P Elektronische Bauelemente P-Ch Enhancement Mode Power MOSFET -7.8 A, -30 V, RDS(ON) 21 m CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 25-Aug-2010 Rev. A Any changes of specification will not be informed individually. Page 4 of 4