SAMWIN SW3710 N-channel MOSFET Features TO-220 BVDSS : 100V ID ■ High ruggedness ■ RDS(ON) (Max 0.023 Ω)@VGS=10V ■ Gate Charge (Typ 100nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested : 57A RDS(ON) : 0.023 ohm 1 2 2 3 1 1. Gate 2. Drain 3. Source General Description This N-channel enhancement mode field-effect power transistor using SAMWIN semiconductor’s advanced planar stripe, DMOS technology intended for battery Operated systems like a DC-DC converter motor control , ups ,audio amplifier. Also, especially designed to minimize RDS(ON), low gate charge and high rugged avalanche characteristics. 3 Order Codes Item 1 Sales Type SW P 3710 Marking SW3710 Package TO-220 Packaging TUBE Absolute maximum ratings Symbol VDSS ID Parameter Value Unit Drain to Source Voltage 100 V Continuous Drain Current (@TC=25oC) 57 A Continuous Drain Current (@TC=100oC) 40 A 235 A ± 20 V IDM Drain current pulsed VGS Gate to Source Voltage EAS Single pulsed Avalanche Energy (note 2) 482 mJ EAR Repetitive Avalanche Energy (note 1) 7 mJ dv/dt Peak diode Recovery dv/dt (note 3) 5 V/ns 160 W 1.05 W/oC -55 ~ + 150 oC 300 oC PD TSTG, TJ TL (note 1) Total power dissipation (@TC Derating Factor above =25oC) 25oC Operating Junction Temperature & Storage Temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. Thermal characteristics Symbol Parameter Value Min. Rthjc Thermal resistance, Junction to case Rthcs Thermal resistance, Case to Sink Rthja Thermal resistance, Junction to ambient Mar. 2011. Rev. 2.0 Typ. Max. 0.92 Unit oC/W oC/W 0.5 62.5 Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. oC/W 1/7 SAMWIN SW3710 Electrical characteristic ( TC = 25oC unless otherwise specified ) Symbol Parameter Test conditions Min. Typ. Max. Unit 100 - - V Off characteristics BVDSS Drain to source breakdown voltage VGS=0V, ID=250uA ΔBVDSS / ΔTJ Breakdown voltage temperature coefficient ID=250uA, referenced to 25oC - 0.066 - V/oC - 1 uA Drain to source leakage current VDS=100V, VGS=0V - IDSS VDS=80V, TC=125oC - - 100 uA Gate to source leakage current, forward VGS=20V, VDS=0V - - 100 nA Gate to source leakage current, reverse VGS=-20V, VDS=0V - - -100 nA 2.0 - 4.0 V 0.023 Ω IGSS On characteristics VGS(TH) Gate threshold voltage VDS=VGS, ID=250uA RDS(ON) Drain to source on state resistance VGS=10V, ID = 30A Dynamic characteristics Ciss Input capacitance 3400 4250 Coss Output capacitance 1320 1650 Crss Reverse transfer capacitance 215 340 td(on) Turn on delay time 60 120 70 160 195 310 Fall time 120 260 Qg Total gate charge 96 140 Qgs Gate-source charge 23 - Qgd Gate-drain charge 36 - Min. Typ. Max. Unit - - 57 A - - 235 A tr td(off) tf Rising time Turn off delay time VGS=0V, VDS=25V, f=1MHz VDS=50V, ID=57A, RG=25Ω VDS=80V, VGS=10V, ID=57A pF ns nC Source to drain diode ratings characteristics Symbol Parameter Test conditions IS Continuous source current ISM Pulsed source current Integral reverse p-n Junction diode in the MOSFET VSD Diode forward voltage drop. IS=57A, VGS=0V - - 1.5 V Trr Reverse recovery time - 92 - ns Qrr Breakdown voltage temperature IS=57A, VGS=0V, dIF/dt=100A/us - 160 - nC ※. Notes 1. Repeatitive rating : pulse width limited by junction temperature. 2. L = 270uH, IAS = 57A, VDD = 25V, RG=25Ω, Starting TJ = 25oC 3. ISD ≤ 57A, di/dt = 300A/us, VDD ≤ BVDSS, Staring TJ =25oC 4. Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2% 5. Essentially independent of operating temperature. Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. 2/7 SAMWIN SW3710 Fig. 1. On-state characteristics Fig. 2. Transfer characteristics VGS Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V ID, Drain Current [A] 2 10 ID, Drain Current [A] 2 10 1 10 o 175 C 1 10 o 25 C o -55 C ، طNotes : 1. 250¥ىs Pulse Test 2. TC = 25،ة ، طNotes : 1. VDS = 25V 2. 250¥ىs Pulse Test 0 0 10 -1 0 10 10 1 10 2 10 4 6 8 10 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Fig. 3. On-resistance variation vs. drain current and gate voltage Fig. 4. On state current vs. diode forward voltage 25 VGS = 20V VGS = 10V 20 2 10 IDR, Reverse Drain Current [A] RDS(ON), Drain-Source On-Resistance [m¥]ط 30 15 10 5 ، طNote : TJ = 25،ة 1 10 175،ة 25،ة ، طNotes : 1. VGS = 0V 2. 250¥ىs Pulse Test 0 0 0 50 100 150 200 250 10 300 0.2 0.4 0.6 ID, Drain Current [A] Fig. 5. Capacitance characteristics (Non-Repetitive) 1.0 1.2 1.4 1.6 1.8 Fig. 6. Gate charge characteristics 12 5500 Ciss=Cgs+Cgd(Cds=shorted) 5000 VDS = 50V Coss=Cds+Cgd 10 VGS, Gate-Source Voltage [V] Crss=Cgd 4500 4000 Capacitance [pF] 0.8 VSD, Source-Drain voltage [V] ، طNotes : 1. VGS = 0V 3500 3000 2. f=1MHz Ciss 2500 2000 Coss 1500 1000 500 5 6 4 2 ، طNote : ID = 57 A Crss 0 0 0 VDS = 80V 8 10 15 20 25 VDS, Drain-Source Voltage [V] 30 35 0 10 20 30 40 50 60 70 80 90 100 QG, Total Gate Charge [nC] Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. 3/7 SAMWIN SW3710 Fig 7. Breakdown Voltage Variation vs. Junction Temperature Fig. 8. On resistance variation vs. junction temperature RDS(ON), (Normalized) 1.0 ، طNotes : 1. VGS = 0 V 0.9 2. ID = 250 ¥ىA Drain-Source On-Resistance 3.0 1.1 2.5 2.0 1.5 1.0 ، طNotes : 1. VGS = 10 V 0.5 2. ID = 30 A 0.8 -100 -50 0 50 100 150 0.0 -100 200 -50 0 50 100 150 200 o o TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Fig. 9. Maximum drain current vs. case temperature. Fig. 10. Maximum safe operating area 3 10 80 Operation in This Area is Limited by R DS(on) ID, Drain Current [A] 60 ID' Drain Current [A] 40 100 s 2 10 1 ms 10 ms DC 1 10 ، طNotes : o 1. TC = 25 C 20 o 2. TJ = 175 C 3. Single Pulse 0 0 25 10 50 75 100 125 150 -1 0 10 175 1 10 10 2 10 VDS, Drain-Source Voltage [V] o TC' Case Temperature [ C] Fig. 11. Transient thermal response curve 0 10 Z¥èJC(t), Thermal Response BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 D=0.5 ، طNotes : 1. Z¥èJC(t) = 0.92 ،ة/W Max. 0.2 2. Duty Factor, D=t1/t2 0.1 -1 10 3. TJM - TC = PDM * Z¥èJC(t) 0.05 0.02 0.01 single pulse -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 t1, Square Wave Pulse Duration [sec] Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. 4/7 SAMWIN SW3710 Fig. 12. Gate charge test circuit & waveform VGS Same type as DUT QG VDS QGD QGS DUT VGS 1mA Charge Fig. 13. Switching time test circuit & waveform VDS RL RG 90% VDS VDD VIN 10VIN DUT 10% 10% td(on) td(off) tr tON tf tOFF Fig. 14. Unclamped Inductive switching test circuit & waveform 1 EAS = L BVDSS IAS BVDSS - VDD IAS VDS RG 2 BVDSS L X IAS2 X VDD ID(t) 10VIN DUT VDS(t) tp time Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. 5/7 SAMWIN SW3710 Fig. 15. Peak diode recovery dv/dt test circuit & waveform DUT + V DS 10V VGS (DRIVER) L IS di/dt IS (DUT) IRM VDS RG 10VGS Diode reverse current VDD Diode recovery dv/dt Same type as DUT VDS (DUT) *. dv/dt controlled by RG *. Is controlled by pulse period VF VDD Body diode forward voltage drop Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. 6/7 SAMWIN SW3710 REVISION HISTORY Revision No. Changed Characteristics Responsible Date Issuer REV 1.0 Origination, First Release Alice Nie 2007.12.05 XZQ REV 2.0 Updated the format of datasheet and added Order Codes. Alice Nie 2011.03.24 XZQ WWW.SEMIPOWER.COM.CN 西安芯派电子科技有限公司 深圳市南方芯源科技有限公司 地址：西安市高新区高新一路25号创新大厦MF6 地址：深圳市福田区天安数码城时代大厦A座2005 电话：029 - 88253717 传真：029 - 88251977 电话：0755 - 83981818 传真：0755 - 83476838 Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. 7/7