HANBIT HMF2M32B4V-70

HANBit
HMF2M32B4V
Flash-ROM Module 8MByte (2Mx32Bit), 72Pin-SO-DIMM, 3.3V
Design
Part No. HMF2M32B4V
GENERAL DESCRIPTION
The HMF2M32B4V is a high-speed flash read only memory (FROM) module containing 4,194,304 words organized in a
x32bit configuration. The module consists of four 1M x 16 FROM mounted on a 72-pin SO-DIMM type, single - sided, FR4printed circuit board.
Commands are written to the command register using standard microprocessor write timings.
Register contents serve as input to an internal state-machine, which controls the erase and programming circuitry. Write
cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the
device is similar to reading from 12.0V flash or EPROM devices.
Output enable (/OE) and write enable (/WE) can set the memory input and output. The host system can detect a program or
erase operation is complete by observing the Ready Pin, or reading the DQ7(Data # Polling) and DQ6(Toggle) status bits.
When FROM module is disable condition the module is becoming power standby mode, system designer can get low-power
design. All module components may be powered from a single + 3.0V DC power supply and all inputs and outputs are LVTTLcompatible.
FEATURES
PIN ASSIGNMENT
w Access time: 70, 80, 90, 120ns
w High-density 8MByte design
w High-reliability, low-power design
PIN
Symbol
PIN
Symbol
PIN
Symbol
PIN
Symbol
1
Vss
21
DQ15
41
DQ29
61
A8
42
DQ30
62
A7
43
DQ31
63
A6
44
NC
64
A5
65
A4
66
A3
w Single + 3.0V ± 0.5V power supply
2
/RESET
22
w All in/outputs are LVTTL-compatible
3
DQ0
23
w FR4-PCB design
4
DQ1
24
NC
(/CE_4L)
NC
(/CE_3H)
DQ16
NC
(/CE_4H)
NC
(/CE_3H)
w Minimum 1,000,000 write/erase cycle
5
DQ2
25
DQ17
45
w Sector erases architecture
6
DQ3
26
DQ18
46
7
DQ4
27
DQ19
47
A19
67
A2
8
DQ5
28
DQ20
48
/OE
68
A1
OPTIONS
MARKING
w Timing
9
DQ6
29
DQ21
49
/WE
69
A0
70ns access
-70
10
Vcc
30
Vcc
50
A18
70
A20
80ns access
-80
11
DQ7
31
DQ22
51
A17
71
NC
90ns access
-90
12
/CE_1L
32
DQ23
52
A16
72
Vss
120ns access
-120
13
/CE_2L
33
/CE_1H
53
A15
14
DQ8
34
/CE_2H
54
A14
15
DQ9
35
DQ24
55
A13
16
DQ10
36
DQ25
56
A12
17
DQ11
37
DQ26
57
A11
18
DQ12
38
DQ27
58
A10
19
DQ13
39
Vss
59
Vcc
20
DQ14
40
DQ28
60
A9
w Packages
72-pin SO-DIMM
URL :www.hbe.co.kr
REV.02(August,2002)
B
1
HANBit Electronics Co., Ltd.
HANBit
HMF2M32B4V
FUNCTIONAL BLOCK DIAGRAM
32
DQ0 - DQ31
20
A0 – A19
A0-19
DQ 0-15
/WE
/OE
/CE_IL
U1
/CE
RY-BY
/Reset
A0-19
DQ 15-31
/WE
/OE
U3
/CE
/CE_IH
RY-BY
/Reset
A0-19
DQ 0-15
/WE
/OE
/CE_2L
U2
/CE
RY-BY
/Reset
A0-19
DQ 15-31
/WE
/WE
/OE
/CE_2H
/OE
/RY_BY
RY-BY
/RESET
/Reset
URL :www.hbe.co.kr
REV.02(August,2002)
U4
/CE
2
HANBit Electronics Co., Ltd.
HANBit
HMF2M32B4V
TRUTH TABLE
MODE
/OE
/CE
/WE
/RESET
DQ ( /BYTE=L )
POWER
STANDBY
X
H
X
Vcc±0.3V
HIGH-Z
STANDBY
NOT SELECTED
H
L
H
H
HIGH-Z
ACTIVE
READ
L
L
H
H
DOUT
ACTIVE
WRITE or ERASE
X
L
L
H
DIN
ACTIVE
NOTE: X means don’t care
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATING
VIN,OUT
-0.5V to Vcc+0.5V
Voltage with respect to ground Vcc
VCC
-0.5V to +4.0V
Storage Temperature
TSTG
-65oC to +150oC
Voltage with respect to ground all other pins
Operating Temperature
TA
-55oC to +125 oC
w Stresses greater than those listed under " Absolute Maximum Ratings" may cause permanent damage to the device.
This is a stress rating only and functional operation of the device at these or any other conditions above those indicated
in the operating section of this specification is not i mplied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS
PARAMETER
SYMBOL
MIN
Vcc for ± 10% device Supply Voltages
Vcc
2.7V
Ground
VSS
0
TYP.
MAX
3.6V
0
0
DC AND OPERATING CHARACTERISTICS ( 0oC ≤ TA ≤ 70 oC )
PARAMETER
TEST CONDITIONS
SYMBOL
MIN
MAX
UNIT
Input Load Current
Vcc=Vcc max, V IN= GND to Vcc
IL1
±1.0
µA
Output Leakage Current
Vcc=Vcc max, V OUT= GND to Vcc
IL0
±1.0
µA
Output High Voltage
IOH = -2.0mA, Vcc = Vcc min
VOH
Output Low Voltage
IOL = 4.0mA, Vcc =Vcc min
VOL
/CE = VIL,
5MHZ
Vcc Active Read Current (1)
V
0.45
1MHZ
Vcc Active Write Current (2)
/CE = VIL, /OE=VIH
ICC2
Vcc Standby Current
/CE, /RESET=Vcc±0.3V
ICC3
Low Vcc Lock-Out Voltage
VLKO
V
18
32
4
8
40
60
mA
60
mA
2.5
V
ICC1
/OE = VIH,
Notes:
2.4
mA
2.3
1. The Icc current listed is typically less than 2mA/MHz, with /OE at V IH.
2. Icc active while embedded algorithm (program or erase) is in progress
3. Maximum Icc current specifications are tested with Vcc=Vcc max
URL :www.hbe.co.kr
REV.02(August,2002)
3
HANBit Electronics Co., Ltd.
HANBit
HMF2M32B4V
ERASE AND PROGRAMMING PERFORMANCE
LIMITS
PARAMETER
MIN.
Sector Erase Time
UNIT
TYP.
MAX.
0.7
15
-
Chip Erase Time
COMMENTS
sec
25
Excludes 00H programming
prior to erasure
sec
Byte Programming Time
-
9
300
µs
Chip Programming Time
-
18
54
sec
Excludes system-level
overhead
TSOP CAPACITANCE
PARAMETER
SYMBOL
CIN
PARAMETER
DESCRIPTION
TEST SETUP
MIN
MAX
UNIT
VIN = 0
6
7.5
pF
VOUT = 0
8.5
12
pF
VIN = 0
7.5
9
pF
Input Capacitance
COUT
Output Capacitance
CIN2
Control Pin Capacitance
Notes : Test conditions TA = 25o C, f=1.0 MHz.
AC CHARACTERISTICS
u Read Only Operations Characteristics
PARAMETER
SYMBOLS
Speed Options
DESCRIPTION
TEST SETUP
UNIT
JEDEC STANDARD
tAVAV
tRC
Read Cycle Time
-70R
-80
-90
-120
Min
70
80
90
120
ns
Max
70
80
90
120
ns
Max
70
80
90
120
ns
tAVQV
tACC
Address to Output Delay
/CE = V IL
/OE = VIL
tELQV
tCE
Chip Enable to Output Delay
/OE = VIL
tGLQV
tOE
Chip Enable to Output Delay
Max
30
30
35
35
ns
tEHQZ
tDF
Chip Enable to Output High-Z
Max
25
25
30
30
ns
tGHQZ
tDF
Max
25
25
30
30
ns
tAXQX
tQH
Output Enable to Output High-Z
Output Hold Time From Addresses,
/CE or /OE, Whichever Occurs First
Min
0
ns
TEST SPECIFICATIONS
TEST CONDITION
70R, 80
Output load
90, 120
UNIT
100
pF
1TTL gate
Output load capacitance,CL (Including jig capacitance)
30
Input rise and full times
5
ns
0.0-3.0
V
Input timing measurement reference levels
1.5
V
Output timing measurement reference levels
1.5
V
Input pulse levels
URL :www.hbe.co.kr
REV.02(August,2002)
4
HANBit Electronics Co., Ltd.
HANBit
HMF2M32B4V
5.0V
2.7kΩ
IN3064
or Equivalent
Device
Under
Test
CL
6.2kΩ
Diodes = IN3064
or Equivalent
Note : CL = 100pF including jig capacitance
u Erase/Program Operations
PARAMETER SYMBOLS
Speed Options
DESCRIPTION
UNIT
JEDEC
STANDARD
70R
80
90
120
tAVAV
tWC
Write Cycle Time
Min
70
80
90
12
tAVWL
tAS
Address Setup Time
Min
tWLAX
tAH
Address Hold Time
Min
45
45
45
50
ns
tDVWH
tDS
Data Setup Time
Min
35
35
45
50
ns
tWHDX
tDH
Data Hold Time
Min
0
ns
tOES
Output Enable Setup Time
Min
0
ns
Read Recover Time Before Write
Min
0
ns
0
ns
ns
tGHWL
tGHWL
tELWL
tCS
/CE Setup Time
Min
0
ns
tWHEH
tCH
/CE Hold Time
Min
0
ns
tWLWH
tWP
Write Pulse Width
Min
tWHWL
tWPH
Write Pulse Width High
Min
30
ns
tWHWH1
tWHWH1
Byte Programming Operation
Typ
9
µs
tWHWH2
tWHWH2
Sector Erase Operation (Note1)
Typ
0.7
sec
Vcc set up time
Min
50
µs
tVCS
35
35
35
50
ns
Notes : 1 . This does not include the preprogramming time
2 . This timing is only for Sector Protect operations
URL :www.hbe.co.kr
REV.02(August,2002)
5
HANBit Electronics Co., Ltd.
HANBit
HMF2M32B4V
u Erase/Program Operations
Alternate /CE Controlled Writes
PARAMETER SYMBOLS
Speed Options
DESCRIPTION
UNIT
JEDEC
STANDARD
-70R
-80
-90
120
tAVAV
tWC
Write Cycle Time
Min
70
80
90
12
tAVWL
tAS
Address Setup Time
Min
tWLAX
tAH
Address Hold Time
Min
45
45
45
50
ns
tDVWH
tDS
Data Setup Time
Min
35
35
45
50
ns
tWHDX
tDH
Data Hold Time
Min
0
ns
tOES
Output Enable Setup Time
Min
0
ns
Read Recover Time Before Write
Min
0
ns
0
ns
ns
tGHWL
tGHWL
tELWL
tCS
/CE Setup Time
Min
0
ns
tWHEH
tCH
/CE Hold Time
Min
0
ns
tWLWH
tWP
Write Pulse Width
Min
tWHWL
tWPH
Write Pulse Width High
Min
30
ns
tWHWH1
tWHWH1
Byte Programming Operation
Typ
9
µs
tWHWH2
tWHWH2
Sector Erase Operation (Note1)
Typ
0.7
sec
35
35
35
50
ns
Notes : 1. This does not include the preprogramming ti me
2 . This timing is only for Sector Protect operations
u READ OPERATIONS TIMING
URL :www.hbe.co.kr
REV.02(August,2002)
6
HANBit Electronics Co., Ltd.
HANBit
HMF2M32B4V
u RESET TIMING
u PROGRAM OPERATIONS TIMING
Alternate /WE Controlled Writes
URL :www.hbe.co.kr
REV.02(August,2002)
7
HANBit Electronics Co., Ltd.
HANBit
HMF2M32B4V
Alternate /CE Controlled Writes
u CHIP/BLOCK ERASE OPERATION TIMINGS
URL :www.hbe.co.kr
REV.02(August,2002)
8
HANBit Electronics Co., Ltd.
HANBit
HMF2M32B4V
u DATA# POLLING TIMES DURING INTERNAL ROUTINE OPERATION
u RY_ /BY TIMEING DURING ERASE / PROGRAM OPERATION
URL :www.hbe.co.kr
REV.02(August,2002)
9
HANBit Electronics Co., Ltd.
HANBit
HMF2M32B4V
u TOGGLE# BIT DURING INTERNAL ROUTINE OPERATION
URL :www.hbe.co.kr
REV.02(August,2002)
10
HANBit Electronics Co., Ltd.
HANBit
HMF2M32B4V
PACKAGE DIMENSIONS
<TOP VIEW>
2.2 mm MAX
1.0 ± 0.1mm
URL :www.hbe.co.kr
REV.02(August,2002)
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HANBit Electronics Co., Ltd.
HANBit
HMF2M32B4V
ORDERING INFORMATION
Part Number
Density
Org.
Package
HMF2M32B4V-70
8MByte
2Mx 32
72Pin – SODIMM
HMF2M32B4V-80
8MByte
2Mx 32
HMF2M32B4V-90
8MByte
HMF2M32B4V-120
8MByte
URL :www.hbe.co.kr
REV.02(August,2002)
Component
Vcc
SPEED
4EA
3.3V
70ns
72Pin – SODIMM
4EA
3.3V
80ns
2Mx 32
72Pin – SODIMM
4EA
3.3V
90ns
2Mx 32
72Pin – SODIMM
4EA
3.3V
120ns
12
Number
HANBit Electronics Co., Ltd.