HANBIT HMF2M64F8VA-90

HANBit
HMF2M64F8VA
FLASH-ROM MODULE 16MByte (2M x 64-Bit) ,120PIN SMM,3.3V
Part No. HMF2M64F8VA
GENERAL DESCRIPTION
The HMF2M64F8VA is a high-speed flash read only memory (FROM) module containing 8,388,608 words organized in an
x64bit configuration. The module consists of eight 1M x 16 FROM mounted on a 120-pin, SMM connector FR4-printed circuit
board.
Commands are written to the command register using standard microprocessor write timings.
Register contents serve as input to an internal state-machine, which controls the erase and programming circuitry. Write
cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the
device is similar to reading from 12.0V flash or EPROM devices.
Output enable (/OE) and write enable (/WE) can set the memory input and output. The host system can detect a program or
erase operation is complete by observing the Ready Pin, or reading the DQ7(Data # Polling) and DQ6(Toggle) status bits.
When FROM module is disable condition the module is becoming power standby mode, system designer can get low -power
design. All module components may be powered from a single + 3.0V DC power supply and all inputs and outputs are LVTTLcompatible
FEATURES
w Access time : 70, 90 and 120ns
w High-density 16MByte design
w High-reliability, low-power design
w Single + 3V ± 0.3V power supply
w Easy memory expansion
w Hardware reset pin(RESET#)
w FR4-PCB design
w 120-Pin Designed by 60-Pin Fine Pitch Connector P1,P2
w Minimum 1,000,000 write cycle guarantee per sector
w 20-year data retention at 125 oC
w Flexible sector architecture
w Embedded algorithms
w Erase suspend / Erase resume
OPTIONS
MARKING
w Timing
70ns access
-70
90ns access
-90
120ns access
-120
w Packages
120-pin SMM
URL:www.hbe.co.kr
REV.02(August,2002)
F
1
HANbit Electronics Co., Ltd.
HANBit
HMF2M64F8VA
PIN ASSIGNMENT
P1
P2
PIN
Symbol
PIN
Symbol
PIN
Symbol
PIN
Symbol
1
Vcc
31
Vss
1
Vcc
31
Vss
2
DQ32
32
DQ0
2
DQ16
32
DQ48
3
DQ33
33
DQ1
3
DQ17
33
DQ49
4
DQ34
34
DQ2
4
DQ18
34
DQ50
5
DQ35
35
DQ3
5
DQ19
35
DQ51
6
DQ36
36
DQ4
6
DQ20
36
DQ52
7
DQ37
37
DQ5
7
DQ21
37
DQ53
8
DQ38
38
DQ6
8
DQ22
38
DQ54
9
DQ39
39
DQ7
9
DQ23
39
DQ55
10
Vcc
40
Vss
10
Vcc
40
Vss
11
DQ40
41
DQ8
11
DQ24
41
DQ56
12
DQ41
42
DQ9
12
DQ25
42
DQ57
13
DQ42
43
DQ10
13
DQ26
43
DQ58
14
DQ43
44
DQ11
14
DQ27
44
DQ59
15
DQ44
45
DQ12
15
DQ28
45
DQ60
16
DQ45
46
DQ13
16
DQ29
46
DQ61
17
DQ46
47
DQ14
17
DQ30
47
DQ62
18
DQ47
48
DQ15
18
DQ31
48
DQ63
19
Vcc
49
Vss
19
Vcc
49
Vss
20
A1
50
A10
20
A20
50
/BANK1
21
A2
51
A11
21
A0
51
/BANK0
22
A3
52
A12
22
A16
52
Vss
23
A4
53
A13
23
/WE1
53
/BYTE
24
A5
54
A14
24
/WE2
54
/WE3
25
Vcc
55
Vss
25
Vcc
55
Vss
26
A6
56
A15
26
/OE
56
NC
27
A7
57
A17
27
/RESET
57
NC
28
A8
58
A18
28
/WE0
58
NC
29
A9
59
A19
29
/RY_BY
59
NC
30
Vcc
60
Vss
30
Vcc
60
Vss
URL:www.hbe.co.kr
REV.02(August,2002)
2
HANbit Electronics Co., Ltd.
HANBit
HMF2M64F8VA
FUNCTIONAL BLOCK DIAGRAM
DQ0 – DQ63
A0 – A19
64
20
A(0-19)
DQ(0-15)
/WE0
/WE0
/BYTE
/WE
/OE
/OE
RY-
RY-
/RESE
/RESE
/WE
/WE3
U7
/CE
RY-BY
/RESE
A(0-19)
A(0-
/WE
/BYTE
/OE
RY-BY
/RESE
/WE2
DQ(32-
/WE
DQ(32-
/OE
/BYTE
/OE
/BYTE
/CE
U1
/CE
U5
RY-BY
RY-BY
/RESET
/RESET
A(0-19)
DQ(48-63)
A(0-19)
DQ(48-63)
/WE
/OE
/BANK0
A(0-19)
DQ(16-31)
/WE
U3
/CE
/WE2
/WE1
/BYTE
/OE
U6
/CE
A(0-19)
DQ(16-31)
/WE1
/BYTE
/WE
U2
/CE
A(0-19)
DQ(0-
/CE
/WE3
/BYTE
/BANK1
U4
RY-BY
/RESE
/WE
/OE
/CE
/BYTE
U8
RY-BY
/RESE
/OE
RY_/BY
/RESET
/BYTE
URL:www.hbe.co.kr
REV.02(August,2002)
3
HANbit Electronics Co., Ltd.
HANBit
HMF2M64F8VA
TRUTH TABLE
MODE
/OE
/CE
/WE
DQ
POWER
STANDBY
X
Vcc± 0.3
X
HIGH-Z
STANDBY
NOT SELECTED
H
L
H
HIGH-Z
ACTIVE
READ
L
L
H
Dout
ACTIVE
WRITE or ERASE
H
L
L
Din
ACTIVE
NOTE: X means don’t care
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATING
VIN,OUT
-0.5V to +0.5V
Voltage with respect to ground Vcc
VCC
-0.5V to +4.0V
Storage Temperature
TSTG
-65oC to +150oC
Voltage with respect to ground all other pins
Operating Temperature
TA
-55Oc to +125 oC
w Stresses greater than those listed under " Absolute Maximum Ratings" may cause permanent damage to the device.
This is a stress rating only and functional operation of the device at these or any other conditions above those indicated
in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS
SYMBOL
MIN
Vcc for ±5% device Supply Voltages
VCC
3.0V
3.6V
Vcc for ± 10% device Supply Voltages
Vcc
2.7V
3.6V
Ground
VSS
0
PARAMETER
TYP.
MAX
0
0
DC AND OPERATING CHARACTERISTICS (0oC ≤ TA ≤ 70 oC ; Vcc = 5V ± 0.5V )
TEST CONDITIONS
PARAMETER
SYMBOL
MIN
MAX
UNITS
Input Leakage Current
Vcc=Vcc max, V IN= GND to Vcc
IL1
±1.0
µA
Output Leakage Current
Vcc=Vcc max, VOUT= GND to Vcc
IL0
±1.0
µA
Output High Voltage
IOH = -2.5mA, Vcc = Vcc min
0.85*
VOH
V
VCC
Output Low Voltage
IOL = 12mA, Vcc =Vcc min
VOL
Vcc Active Current for Read(1)
Vcc Active Current for Program
or Erase(2)
/CE = VIL, /OE=VIH,
ICC1
/CE = VIL, /OE=VIH
Vcc Standby Current
/CE= VIH
Low Vcc Lock-Out Voltage
0.45
V
72
128
mA
ICC2
160
240
mA
ICC3
1.6
40
mA
VLKO
2.3
2.5
V
Notes: 1. The Icc current listed is typically less than 2mA/MHz, with /OE at VIH.
2. Icc active while embedded algorithm (program or erase) is in progress
3. Maximum Icc current specifications are tested with Vcc=Vcc max
URL:www.hbe.co.kr
REV.02(August,2002)
4
HANbit Electronics Co., Ltd.
HANBit
HMF2M64F8VA
ERASE AND PROGRAMMING PERFORMANCE
LIMITS
PARAMETER
UNIT
MIN.
TYP.
MAX.
Sector Erase Time
-
0.7
15
Sec
Byte Programming Time
-
9
300
µs
Chip Programming Time
-
18
54.8
Sec
COMMENTS
Excludes 00H programming
prior to erasure
Excludes system-level
overhead
Excludes system-level
overhead
CAPACITANCE
PARAMETER
SYMBOL
PARAMETER
DESCRIPTION
CIN
TEST SETUP
TYP.
MAX
UNIT
VIN = 0
48
60
pF
VOUT = 0
68
96
pF
VIN = 0
60
72
pF
Input Capacitance
COUT
Output Capacitance
CIN2
Control Pin Capacitance
o
Notes : Test conditions TA = 25 C, f=1.0 MHz.
AC CHARACTERISTICS
u Read Only Operations Characteristics
PARAMETER
SYMBOLS
JEDEC
STANDARD
TAVAV
tRC
Speed Options
DESCRIPTION
TEST SETUP
Read Cycle Time
UNIT
70R
80
-90
-120
Min
70
80
90
120
ns
Max
70
80
90
120
ns
Max
70
80
90
120
ns
TAVQV
tACC
Address to Output Delay
/CE = VIL
/OE = VIL
TELQV
tCE
Chip Enable to Output Delay
/OE = VIL
TGLQV
tOE
Chip Enable to Output Delay
Max
30
30
35
50
ns
TEHQZ
tDF
Chip Enable to Output High-Z
Max
25
25
30
30
ns
TGHQZ
tDF
Max
125
25
30
30
ns
TAXQX
tQH
Output Enable to Output High-Z
Output Hold Time From Addresses,
/CE or /OE, Whichever Occurs First
Min
0
0
0
0
ns
Notes : Test Conditions
Output Load : 1TTL gate and Output Load Capacitance 100 pF, in case of 55ns-30pF
Input rise and fall times : 5 ns , In case of 55ns-5ns
Input pulse levels : 0 .45V to 2.4V, In case of 55ns- 0.0V-3.0V
Timing measurement reference level
Input : 0.8V, Incase of 55ns-1.5V
Output : 2.0V, In case of 55ns-1.5V
URL:www.hbe.co.kr
REV.02(August,2002)
5
HANbit Electronics Co., Ltd.
HANBit
HMF2M64F8VA
3.3V
2.7kΩ
IN3064
or Equivalent
Device
Under
Test
CL
6.2kΩ
Diodes = IN3064
or Equivalent
Note : CL = 100pF including jig capacitance
u Erase/Program Operations
PARAMETER
SYMBOLS
Speed Options
DESCRIPTION
UNIT
JEDEC
STANDARD
70R
80
-90
-120
TAVAV
tWC
Write Cycle Time
Min
70
80
90
120
TAVWL
tAS
Address Setup Time
Min
TWLAX
tAH
Address Hold Time
Min
45
45
45
50
ns
TDVWH
tDS
Data Setup Time
Min
35
35
45
50
ns
TWHDX
tDH
Data Hold Time
Min
0
ns
tOES
Output Enable Setup Time
Min
0
ns
Read Recover Time Before Write
Min
0
ns
0
ns
ns
TGHWL
tGHWL
TELWL
tCS
/CE Setup Time
Min
0
ns
TWHEH
tCH
/CE Hold Time
Min
0
ns
TWLWH
tWP
Write Pulse Width
Min
tWHWL
tWPH
Write Pulse Width High
Min
30
ns
tWHWH1
tWHWH1
Byte Programming Operation
Typ
9
µs
tWHWH2
tWHWH2
Sector Erase Operation (Note1)
Typ
0.7
sec
Vcc set up time
Min
50
µs
tVCS
35
35
45
50
ns
Notes : 1. This does not include the preprogramming time
2. This timing is only for Sector Protect operations
URL:www.hbe.co.kr
REV.02(August,2002)
6
HANbit Electronics Co., Ltd.
HANBit
HMF2M64F8VA
u Erase/Program Operations
Alternate /CE Controlled Writes
PARAMETER SYMBOLS
SPEED OPTION
UNIT
DESCRIPTION
JEDEC
STANDARD
70R
80
-90
-120
tAVAV
tWC
Write Cycle Time
Min
70
80
90
120
tAVEL
tAS
Address Setup Time
Min
tELAX
tAH
Address Hold Time
Min
45
45
45
50
ns
tDVEH
tDS
Data Setup Time
Min
35
35
45
50
ns
tEHDX
tDH
Data Hold Time
Min
0
ns
tOES
Output Enable Setup Time
Min
0
ns
tGHEL
tGHEL
Read Recover Time Before Write
Min
0
ns
tWLEL
tWS
/WE Setup Time
Min
0
ns
tEHWH
tWH
/WE Hold Time
Min
0
ns
tELEH
tCP
/CE Pulse Width
Min
tEHEL
tCPH
/CE Pulse Width High
Min
20
ns
tWHWH1
tWHWH1
Byte Programming Operation
Typ
9
µs
tWHWH2
tWHWH2
Sector Erase Operation (Note)
Typ
0.7
sec
0
35
35
ns
ns
45
50
ns
Notes : This does not include the preprogramming time.
URL:www.hbe.co.kr
REV.02(August,2002)
7
HANbit Electronics Co., Ltd.
HANBit
HMF2M64F8VA
u READ OPERATIONS TIMING
u RESET TIMING
URL:www.hbe.co.kr
REV.02(August,2002)
8
HANbit Electronics Co., Ltd.
HANBit
HMF2M64F8VA
u PROGRAM OPERATIONS TIMING
u CHIP/SECTOR ERASE OPERATION TIMINGS
URL:www.hbe.co.kr
REV.02(August,2002)
9
HANbit Electronics Co., Ltd.
HANBit
HMF2M64F8VA
u DATA# POLLING TIMES(DURING EMBEDDED ALGORITHMS)
u TOGGLE# BIT TIMINGS (DURING EMBEDDED ALGORITHMS)
URL:www.hbe.co.kr
REV.02(August,2002)
10
HANbit Electronics Co., Ltd.
HANBit
HMF2M64F8VA
u SECTOR PROTECT UNPROTECT TIMEING DIAGRAM
u ALTERNATE CE# CONTROLLED WRITE OPERATING TIMINGS
URL:www.hbe.co.kr
REV.02(August,2002)
11
HANbit Electronics Co., Ltd.
HANBit
HMF2M64F8VA
PACKAGE DIMMENSIONS
1.30 ±1.0mm
URL:www.hbe.co.kr
REV.02(August,2002)
12
HANbit Electronics Co., Ltd.
HANBit
HMF2M64F8VA
ORDERING INFORMATION
Part Number
Density
Org.
Package
HMF2M64F8VA-70
16MByte
2M x 64
120 Pin-SMM
HMF2M64F8VA-90
16MByte
2M x 64
HMF2M64F8VA-120
16MByte
2M x 64
URL:www.hbe.co.kr
REV.02(August,2002)
Component
Vcc
SPEED
8EA
3.3V
70ns
120 Pin-SMM
8EA
3.3V
90ns
120 Pin-SMM
8EA
3.3V
120ns
13
Number
HANbit Electronics Co., Ltd.