N P N S I L I C O N T RAN S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. KSH13007W █ HIGH VOLTAGE SWITCH MODE APPLICATION █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-263（D2PAK） Tstg——Storage Temperature………………………… -55~150℃ Tj——Junction Temperature……………………………… 150℃ PC——Collector Dissipation（Tc=25℃）…………………… 80W VCBO——Collector-Base Voltage…………………………… 700V VCEO——Collector-Emitter Voltage………………………… 400V 1―Base，B VEBO ——Emitter-Base Voltage……………………………… 9V 2―Collector，C 3―Emitter, E IC——Collector Current（DC）……………………………… 8A IC——Collector Current（Pulse）…………………………… 16A IB——Base Current……………………………………………4A █ 电参数（Ta=25℃） Symbol Characteristics Min BVCEO Collector-Emitter Sustaining Voltage 400 IEBO Emitter-Base Cutoff Current HFE（1） DC Current Gain Max 1 HFE（2） VCE(sat1) Typ Unit Test Conditions V IC=10mA, IB=0 mA VEB=9V, IC=0 10 40 VCE=5V, IC=2A 5 30 VCE=5V, IC=5A 1 V IC=2A, IB=400mA VCE(sat2) 2 V IC=5A, IB=1A VCE(sat3) 3 V IC=8A, IB=2A 1.2 V IC=2A, IB=0.4A 1.6 V IC=5A, IB=1A pF VCB=10V, f=0.1MHz z VBE(sat1) Collector- Emitter Saturation Voltage Base- Emitter Saturation Voltage VBE(sat2) Cob Output Capacitance fT Current Gain-Bandwidth Product tON Turn On time 1.6 uS tSTG Storage Time 3 uS tF Fall Time 0.7 uS 110 VCE=10V, IC=500mA 4 Vcc=125V,Ic=5A IB1=IB2=1A █ hFE Classification H1 10—16 H2 14—21 H3 H4 H5 19—26 24—31 29—40 Shantou Huashan Electronic Devices Co.,Ltd. N P N S I L I C O N T RAN S I S T O R KSH13007W Shantou Huashan Electronic Devices Co.,Ltd. N P N S I L I C O N T RAN S I S T O R KSH13007W