NPN S I L I C O N T RA N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HC4106 █ APPLICATIONS High Breakdown Voltage And High Reliability.Fast Switching Speed. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-220 T stg ——Storage Temperature………………………… -55~150℃ T j ——Junction Temperature…………………………………150℃ PC——Collector Dissipation（Tc=25℃）……………………………50W VCBO ——Collector-Base Voltage………………………………500V 1―Base，B 2―Collector，C 3―Emitter，E VCEO——Collector-Emitter Voltage……………………………400V VEBO——Emitter-Base Voltage………………………………………7V IC——Collector Current………………………………………………7A Ib——Base Current………………………………………………3A █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol Characteristics Min Typ Max Unit Test Conditions BVCBO Collector-Base Breakdown Voltage 500 V IC=1mA, IE=0 BVCEO Collector-Emitter Breakdown Voltage 400 V IC=5mA, IB=0 BVEBO Emitter-Base Breakdown Voltage 7 V IE=1mA，IC=0 ICBO Collector Cut-off Current 10 μA VCB=400V, IE=0 IEBO Emitter Cut-off Current 10 μA VEB=5V, IC=0 HFE（1） DC Current Gain 15 VCE=5V, IC=0.8A HFE（2） DC Current Gain 10 VCE=5V, IC=4A HFE（3） DC Current Gain 10 VCE=5V, IC=10mA 50 VCE(sat) Collector- Emitter Saturation Voltage 0.8 V IC=4A, IB=0.8A VBE(sat) Base-Emitter Saturation Voltage 1.5 V IC=4A, IB=0.8A fT Current Gain-Bandwidth Product 20 MHz VCE=10V,IC=0.8A Cob Output Capacitance 80 VCB=10V, IE=0，f=1MHz tON Turn-On Time 0.5 pF μS tSTG Storage 2.5 μS IB1=1A，IB2=-2A 0.3 μS RL=40ohms tF Time Fall Time █ hFE Classification L 15—30 M N 20—40 30—50 VCC=10V,IC=5A