HUASHAN HP147T

PNP DARLINGTON TRANSISTOR
Shantou Huashan Electronic Devices Co.,Ltd.
HP147T
█ APPLICATIONS
High DC Current Gain
█ ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
TO-220
Tstg——Storage Temperature………………………… -55~150℃
Tj——Junction Temperature……………………………… 150℃
PC——Collector Dissipation(Tc=25℃)…………………… 80W
VCBO——Collector-Base Voltage………………………… -100V
VCEO——Collector-Emitter Voltage……………………… -100V
1―Base,B
2―Collector,C
3―Emitter, E
VEBO——Emitter-Base Voltage……………………………… -5V
IC——Collector Current(DC)……………………………… -10A
IB——Base Current…………………………………………-0.5A
█ ELECTRICAL CHARACTERISTICS(Ta=25℃)
Symbol
BVCEO(SUS)
Characteristics
Collector-Emitter Sustaining Voltage
Min
Typ
Max
-100
Unit
Test Conditions
V
IC=-30mA, IB=0
ICEO
Collector Cutoff Current
-2
mA
VCE=-50V, IB=0
ICBO
Collector Cutoff Current
-1
mA
VCB=-100V, IE=0
IEBO
Emitter-Base Cutoff Current
-2
mA
VEB=-5V, IC=0
HFE(1)
DC Current Gain
HFE(2)
VCE(sat1)
1000
VCE=-4V, IC=-5A
500
VCE=-4V, IC=-10A
Collector- Emitter Saturation Voltage
VCE(sat2)
VBE(sat)
Base- Emitter Saturation Voltage
VBE(on)
Base- Emitter On Voltage
-2
V
IC=-5A, IB=-10mA
-3
V
IC=-10A, IB=-40mA
-3.5
V
IC=-10A, IB=-40mA
-3
V
VCE=-4V,IC=-10A,
tD
Deiay time
0.15
uS
tR
Rise Time
0.55
uS
tS
Storage Time
2.5
uS
tF
Fall Time
2.5
uS
Vcc=-30V,Ic=-5A
IB1=-20mA
IB2=20mA
Shantou Huashan Electronic Devices Co.,Ltd.
PNP DARLINGTON TRANSISTOR
HP147T