ETC HE13009

N P N S I L I C O N T RAN S I S T O R
Shantou Huashan Electronic Devices Co.,Ltd.
HE13009
█ HIGH VOLTAGE SWITCH MODE APPLICICATIONS
High Speed Switching
Suitable for Switching Regulator and Montor Control
█ ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
TO-220
Tstg——Storage Temperature………………………… -55~150℃
Tj——Junction Temperature……………………………… 150℃
PC——Collector Dissipation(Tc=25℃)…………………… 100W
VCBO——Collector-Base Voltage…………………………… 700V
VCEO——Collector-Emitter Voltage………………………… 400V
1―Base,B
2―Collector,C
3―Emitter, E
VEBO ——Emitter-Base Voltage……………………………… 9V
IC——Collector Current(DC)……………………………… 12A
IB——Base Current……………………………………………6A
█ ELECTRICAL CHARACTERISTICS(Ta=25℃)
Symbol
BVCEO
IEBO
HFE(1)
Characteristics
Collector-Emitter Breakdown Voltage
Min
Typ
400
1
Emitter-Base Cut-off Current
DC Current Gain
HFE(2)
Max
Unit
Test Conditions
V
IC=10mA, IB=0
mA
VEB=9V, IC=0
8
40
VCE=5V, IC=5A
6
30
VCE=5V, IC=8A
1
V
IC=5A, IB=1A
VCE(sat)2
1.5
V
IC=8A, IB=1.6A
VCE(sat)3
3
V
IC=12A, IB=3A
1.2
V
IC=5A, IB=1A
1.6
V
IC=8A, IB=1.6A
pF
VCB=10V,f=0.1MHz
MHz
VCE=10V,IC=0.5A
VCE(sat)1
VBE(sat)1
Collector- Emitter Saturation Voltage
Base-Emitter Saturation Voltage
VBE(sat)2
Cob
180
Output Capacitance
4
fT
Current Gain-Bandwidth Product
tON
Turn On Time
1.1
μs
tSTG
Storage Time
3
μs
VCC=125V, IC=8A,
0.7
μs
IB1=1.6A,IB2=-1.6A
tF
Fall Time