PNP S I L I C O N T R AN S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HS1205 █ APPLICATIONS Large Current Switching █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-126 Tstg——Storage Temperature………………………… -55~150℃ Tj——Junction Temperature……………………………… 150℃ PC——Collector Dissipation（Tc=25℃）…………………… 10W PC——Collector Dissipation（TA=25℃）…………………… 1W VCBO ——Collector-Base Voltage………………………… -25V 1―Base，B 2―Collector，C 3―Emitter，E VCEO ——Collector-Emitter Voltage……………………… -20V VEBO——Emitter-Base Voltage……………………………… -5V IC——Collector Current………………………………………-5A █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol Characteristics Min Typ Max Unit Test Conditions BVCBO Collector-Base Breakdown Voltage -25 V IC=-10μA, IE=0 BVCEO Collector-Emitter Breakdown Voltage -20 V IC=-1mA, IB=0 BVEBO Emitter-Base Breakdown Voltage -5 V IE=-10μA, IC=0 ICBO Collector Cut-off Current -500 nA VCB=-20V, IE=0 IEBO Emitter Cut-off Current -500 nA VEB=-4V, IC=0 HFE（1） DC Current Gain 100 HFE（2） DC Current Gain 60 VCE=-2V, IC=-500mA 400 VCE=-2V, IC=-4A VCE(sat1) Collector- Emitter Saturation Voltage -250 -500 mV IC=-3A, IB=-60mA VCE(sat2) Collector- Emitter Saturation Voltage -1.0 -1.3 V IC=-3A, IB=-60mA VBE(sat) -0.94 -1.2 V IC=-3A, IB=-60mA ft Base-Emitter Saturation Voltage Current Gain-Bandwidth Product 320 MHz Cob Output Capacitance 60 pF tON Turn-On Time 40 nS tSTG Storage 200 nS 10 nS tF Time Fall Time VCE=-5V, IC=-200mA, VCB=-10V, IE=0，f=1MHz █ hFE Classification R S T 100—200 140—280 200—400 See specified test circuit