P4C422 P4C422 ULTRA HIGH SPEED 256 x 4 STATIC CMOS RAM FEATURES Separate I/O High Speed (Equal Access and Cycle Times) – 10/12/15/20/25/35 ns (Commercial) – 15/20/25 /35 ns (Military) Fully TTL Compatible Inputs and Outputs Resistant to single event upset and latchup resulting from advanced process and design improvements CMOS for Low Power – 495 mW Max. – 10/12/15/20/25 (Commercial) – 495 mW Max. – 15/20/25/35 (Military) Standard 22-pin 400 mil DIP, 24-pin 300 mil SOIC, 24-pin LCC package and 24-pin CERPACK package Single 5V±10% Power Supply DESCRIPTION The P4C422 is a 1,024-bit high-speed (10ns) Static RAM with a 256 x 4 organization. The memory requires no clocks or refreshing and has equal access and cycle times. Inputs and outputs are fully TTL compatible. Operation is from a single 5 Volt supply. Easy memory expansion is provided by an active LOW chip select one (CS 1) and active HIGH chip select two (CS 2) as well as 3state outputs. In addition to very high performance and very high density, the device features latch-up protection, single event and upset protection. The P4C422 is offered in several packages: 22-pin 400 mil DIP (plastic and ceramic), 24pin 300 mil SOIC, 24-pin LCC and 24-pin CERPACK. Devices are offered in both commercial and military temperature ranges. FUNCTIONAL BLOCK DIAGRAM PIN CONFIGURATIONS CS 2 CS 1 A5 A6 A7 DATA INPUT CONTROL COLUMN DECODER SENSE AMPS A0 A1 A2 A3 A4 32 X 32 ARRAY ROW DECODER D0 D1 D2 D3 WE OE O0 O1 O2 O3 A3 A2 A1 1 24 2 3 23 22 A0 A5 A6 A7 GND D0 O0 D1 4 21 20 19 NC 5 6 7 8 18 17 9 10 16 15 11 12 14 13 V CC A4 WE CS 1 OE CS 2 O3 D3 O2 D2 O1 A3 A2 A1 A0 A5 A6 A7 GND D0 O0 D1 1 2 3 22 21 20 4 5 6 19 18 17 7 8 16 9 15 14 10 11 13 12 NC SOIC (S4) CERPACK (F3) SIMILAR TOP VIEW DIP (P3-1, D3-1) TOP VIEW V CC A4 WE CS 1 OE CS 2 O3 D3 O2 D2 O1 INDEX A1 A2 A3 VCC A4 WE A0 4 3 2 1 24 22 21 A5 5 20 OE NC 6 19 CS2 A6 7 18 NC A7 8 17 O3 GND 9 16 15 D3 10 11 12 13 D0 O0 D1 O1 23 14 CS1 D 2 O2 LCC (L4) TOP VIEW Means Quality, Service and Speed 1Q97 1 P4C422 MAXIMUM RATINGS(1) Symbol Parameter Value Unit VCC Power Supply Pin with Respect to GND – 0.5 to +7 V VTERM Terminal Voltage with Respect to GND (up to 7.0V) – 0.5 to VCC +0.5 V TA Operating Temperature – 55 to +125 °C Symbol Parameter Value Unit TBIAS Temperature Under Bias – 55 to +125 °C TSTG Storage Temperature – 65 to +150 °C I OUT DC Output Current 20 mA CAPACITANCES(4) RECOMMENDED OPERATING CONDITIONS (VCC = 5.0V, TA = 25°C, f = 1.0MHz) Grade (2) Commercial Military Ambient Temp Gnd Symbol Vcc Parameter Conditions Typ. Unit 0°C to 70°C 0V 5.0V ±10% CIN Input Capacitance VIN = 0V 5 pF –55°C to 125°C 0V 5.0V ±10% COUT Output Capacitance VOUT = 0V 7 pF DC ELECTRICAL CHARACTERISTICS Over recommended operating temperature and supply voltage(2) P4C422 Symbol Parameter Test Conditions Min Max 2.4 Unit VOH Output High Voltage IOH = –5.2 mA, VCC = Min. V VOL Output Low Voltage IOL = +8 mA, VCC = Min. VIH Input High Voltage VIL Input Low Voltage VCL Input Clamp Diode Voltage IIN = –10 mA –1.5 I IX Input Load Current GND≤ VIN ≤ VCC –10 10 µA I OZ Output Current (High Z) VOL≤ VOUT ≤ VOH , Output Disabled –10 10 µA I OS Output Short Circuit Current(3) VCC= Max., VOUT = GND 90 mA 0.4 2.1 V V 0.8 V V POWER DISSIPATION CHARACTERISTICS VS. SPEED Symbol Parameter ICC Dynamic Operating Current Temperature Range -10 -12 -15 -20 -25 -35 Commercial Military 90 N/A 90 N/A 90 90 90 90 65 90 65 90 Notes: 1. Stresses greater than those listed under MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to MAXIMUM rating conditions for extended periods may affect reliability. 2. Extended temperature operation guaranteed with 400 linear feet per minute of air flow. 3. For test purposes, not more than one output at a time should be shorted. Short circuit test duration should not exceed 30 seconds. 4. This parameter is sampled and not 100% tested. Unit mA mA 5. Transition time is ≤ 3ns for 10, 12, and 15 ns products and ≤ 5ns for 20, 25, and 35 ns products, see Fig 1d. Timing is referenced at input and output levels of 1.5V. The output loading is equivalent to the specified IOL/IOH with a load capacitance of 15 pF (10, 12) or 30 pF (15, 20, 25, 35) as in Fig. 1a and 1b respectively. 6. Transition time is ≤ 3ns for 10, 12, and 15 ns products and ≤ 5ns for 20, 25, and 35 ns products, see Fig 1d. Transition is measured at steady state HIGH level -500mV or steady state LOW level +500mV on the output from a level on the input with load shown in Fig. 1c. 7. tW is measured at tWSA = min.: tWSA is measured at tW = min. 2 P4C422 FUNCTIONAL DESCRIPTION An active LOW write enable (WE) controls the writing/ reading operation of the memory. When the chip select one (CS 1) and the write enable (WE) are LOW and the chip select two (CS 2) is HIGH, the information on data inputs (D0 through D3) is written into the addressed memory word and preconditions the output circuitry so that true data is present at the outputs when the write cycle is complete. This preconditioning operation insures minimum write recovery times by eliminating the “write recovery glitch.” Reading is performed with chip selct one (CS 1) LOW, chip select two (CS 2) HIGH, write enable (WE) HIGH and output enable (OE) LOW. The information stored in the addressed word is read out on the noninverting outputs (O0 through O3). The outputs of the memory go to an inactive high impedance state whenever chip select one (CS 1) is HIGH, or during the write operation when write enable (WE) is LOW. TRUTH TABLE CS2 CS1 Mode WE OE Output Standby L X X X High Z Standby X H X X High Z DOUT Disabled H L X H High Z Read H L H L DOUT Write H L L X High Z Notes: H = HIGH L = Low X = Don't Care HIGH Z = Implies outputs are disabled or off. This condition is defined as high impedance state for the P4C422. AC ELECTRICAL CHARACTERISTICS—READ CYCLE (VCC = 5V ± 10% except as noted, All Temperature Ranges)(2) -10* Parameter Sym. -12 -20 -15 -25 -35 Min Max Min Max Min Max Min Max Min Max Min Max tRC Read Cycle Time (5) tACS Chip Select Time (5) tZRCS Chip Select to High-Z (6) tAOS Output Enable Time tZROS Output Enable to High-Z tAA Address Access Time (5) 12 12 20 15 8 12 15 25 ns 8 10 12 15 20 30 ns 7.5 8 8 12 15 25 ns 8 10 12 15 20 30 ns 10 12 15 20 25 35 ns (6) tRC tAA CS2 OE WE DATA OUTPUTS O0–O3 ns 8 TIMING WAVEFORM OF READ CYCLE CS1 35 7.5 *VCC = 5V ± 5% ADDRESS A0–A7 25 Unit tAOS tZROS DATA VALID tZRCS tACS 3 P4C422 AC CHARACTERISTICS—WRITE CYCLE (VCC = 5V ± 10% except as noted, All Temperature Ranges)(2) -10* Parameter Sym. -15 -12 -20 -25 -35 Unit Min Max Min Max Min Max Min Max Min Max Min Max tWC Write Cycle Time (5) 10 tZWS Write Enable to High-Z tWR Write Recovery Time tW Write Pulse Width tWSD tWHD (6) (5,7) 15 12 35 25 20 ns 8 10 12 15 20 30 ns 8 10 12 15 20 25 ns 8 9 11 13 15 20 ns Data Setup Time Prior to Write (5) 0 0 0 2 5 5 ns Data Hold Time (5) 2 2 2 5 5 5 ns 0 0 0 2 5 5 ns 2 2 4 5 5 5 ns 0 0 0 2 5 5 ns 2 2 2 5 5 5 ns tWSA Address Setup Time tWHA Address Hold Time (5) (5,7) tWSCS Chip Select Setup Time tWHCS Chip Select Hold Time (5) (5) *VCC = 5V ± 5% TIMING WAVEFORM OF WRITE CYCLE tWC ADDRESS A0–A7 CS1 CS2 DATA IN D0–D3 tWSA tWHA tWSCS tWHCS tWSD tW tWHD WE DATA OUTPUTS O0–O3 tZWS 4 tWR P4C422 AC TEST LOADS & WAVEFORMS +5 +5 470 Ω DOUT 470 Ω 224 Ω 15 pF DOUT 224 Ω 30 pF 152 Ω VTH= 1.62 V D OUT TH THEVENIN EQUIVALENT Figure 1a Figure 1b +5 3.0 V 470 Ω DOUT GND 224 Ω 90% 10% 10% Note (5) 5 pF Note (5) Figure 1d Figure 1c 5 90% P4C422 ORDERING INFORMATION P4C422 Device Type xx x x Speed Package Processing C 0°C to +70°C M -55˚C to +125˚C MB MIL-STD-883, Class B F D L P S CERPACK CERDIP (400 mil) Ceramic LCC (400 mil Square) Plastic DIP (400 mil) Plastic SOIC (300 mil) 10,12,15, 25, 35 ns Commercial 15,20,25, 35 ns Military 256 x 4 SRAM The P4C422 is also available as SMD Number: 5962-88594 SELECTION GUIDE The P4C422 is available in the following temperature range, speed, and package options. Temperature Range Package 10 12 Speed (ns) 15 20 25 35 Commercial Temperature Plastic DIP SOIC -10PC -10SC -12PC -12SC -15PC -15SC -20PC -20SC -25PC -25SC -35PC -35SC Military Temperature CERDIP LCC CERPACK N/A N/A N/A N/A N/A N/A -15DM -15LM -15FM -20DM -20LM -20FM -25DM -25LM -25FM -35DM -35LM -35FM Military Processed* CERDIP LCC CERPACK N/A N/A N/A N/A N/A N/A -15DMB -20DMB -25DMB -35DMB -15LMB -20LMB -25LMB -35LMB -15FMB -20FMB -25FMB -35FMB *Military temperature range with MIL-STD-883, Class B compliance. N/A = Not Available 6