INCHANGE Semiconductor Product Specification 2SA1757 Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -60V(Min) ·High Switching Speed ·Low Saturation Voltage: VCE(sat)= -0.3V(Max)@ (IC= -3A, IB= -0.15A) ·Wide Area of Safe Operation B APPLICATIONS ·Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -5 A ICM Collector Current-Peak -10 A Collector Power Dissipation @Ta=25℃ 2 PC W Collector Power Dissipation @TC=25℃ 25 TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ INCHANGE Semiconductor Product Specification 2SA1757 Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA ; IB= 0 -60 V VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -3A ; IB= -0.3A; L= 1mH -60 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -50μA ; IC= 0 -5 V V(BR)CBO Collector-Base Breakdown Voltage IE= -50μA ; IC= 0 -100 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -3A; IB= -0.15A -0.3 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -4A; IB= -0.2A -0.5 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= -3A; IB= -0.15A -1.2 V VBE(sat)-2 Base-Emitter Saturation Voltage IC= -4A; IB= -0.2A -1.5 V ICBO Collector Cutoff Current VCB= -100V ; IE=0 -10 μA IEBO Emitter Cutoff Current VEB= -5V; IC=0 -10 μA hFE DC Current Gain IC= -1A ; VCE= -2V Current-Gain—Bandwidth Product IE= 0.5A;VCE= -10V; ftest= 30MHz 80 MHz Output Capacitance IE= 0; VCB= -10V; ftest= 1MHz 130 pF fT COB CONDITIONS MIN TYP. B B B B 160 MAX UNIT 320 Switching times ton Turn-on Time tstg Storage Time tf RL= 10Ω, VCC= -30V IC= -3A; IB1= -IB2= -0.15A Fall Time 2 0.3 μs 1.5 μs 0.3 μs