isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -100V(Min) ·High DC Current Gain: hFE= 2000(Min)@ (VCE= -2V, IC= -2A) ·Low Collector Saturation Voltage: VCE(sat)= -1.5V(Max)@ (IC= -2A, IB= -2mA) B APPLICATIONS ·Designed for low-frequency power amplifiers and lowspeed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL s c s i . w PARAMETER w w VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage n c . i m e VALUE UNIT -100 V -100 V -7 V IC Collector Current-Continuous -5 A ICM Collector Current-Peak -10 A IB Base Current-Continuous -0.5 A Collector Power Dissipation @Ta=25℃ 2 W PC Collector Power Dissipation @TC=25℃ 20 TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ isc Website：www.iscsemi.cn 2SB1430 isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor 2SB1430 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -2mA -1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= -2A; IB= -2mA -2.0 V ICBO Collector Cutoff Current VCB= -100V; IE= 0 -1.0 μA hFE-1 DC Current Gain IC= -2A; VCE= -2V 2000 hFE-2 DC Current Gain IC= -4A; VCE= -2V 500 Current-Gain—Bandwidth Product IC= -0.5A; VCE= -5V fT COB CONDITIONS Turn-on Time tstg Storage Time Fall Time tf w w ton B n c . i m e IE= 0; VCB= -10V; ftest= 1MHz Switching Times IC= -2A, IB1= -IB2= -2mA, VCC≈ -50V; RL= 25Ω hFE-1 Classifications M L K 2000-5000 4000-10000 8000-20000 isc Website：www.iscsemi.cn TYP. B s c s i . w Output Capacitance MIN 2 20000 80 MHz 60 pF 0.5 μs 1.0 μs 1.0 μs