isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -100V(Min) ·High DC Current Gain: hFE= 2000(Min)@ (VCE= -2V, IC= -1.5A) ·Low Collector Saturation Voltage: VCE(sat)= -1.5V(Max)@ (IC= -3A, IB= -6mA) ·Complement to Type 2SD2241 B APPLICATIONS ·High power switching applications. ·Hammer drive, pulse motor drive applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL s c s i . w PARAMETER w w VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage n c . i m e VALUE UNIT -100 V -100 V -5 V IC Collector Current-Continuous -4 A ICM Collector Current-Pulse -6 A IB Base Current-Continuous -0.3 A Collector Power Dissipation @Ta=25℃ 2 W PC Collector Power Dissipation @TC=25℃ 25 TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ isc Website：www.iscsemi.cn 2SB1481 isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor 2SB1481 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -6mA -1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= -3A; IB= -6mA -2.0 V ICBO Collector Cutoff Current VCB= -100V; IE= 0 -2.0 μA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -2.5 mA hFE-1 DC Current Gain IC= -1.5A; VCE= -2V hFE-2 DC Current Gain VECF C-E Diode Forward Voltage 2.0 V Switching Times Turn-on Time tstg Storage Time TYP. s c s .i IF= 1A IC= -3A, IB1= -IB2= -6mA, VCC≈ -30V; RL= 10Ω 2 UNIT V n c . i m e IC= -3A; VCE= -2V MAX -100 B Fall Time isc Website：www.iscsemi.cn MIN B w w w ton tf CONDITIONS 2000 1000 0.15 μs 0.80 μs 0.40 μs