Inchange Semiconductor Product Specification 2SC1098 2SC1098A Silicon NPN Power Transistors DESCRIPTION ・With TO-202 package ・High Voltage ・High transition frequency APPLICATIONS ・Audio frequency power amplifier ・Low speed switching ・Suitable for output stages of 5~17W small stereo sets PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-202) and symbol 导体 半 电 固 D N O IC Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO M E S GE PARAMETER N A H INC Collector-base voltage CONDITIONS Open emitter 2SC1098 Collector-emitter voltage Emitter-base voltage R O T UC VALUE UNIT 70 V 45 Open base 2SC1098A V 60 Open collector 5 V IC Collector current 3 A ICM Collector current-peak 5 A IB Base current 0.6 A PT Total power dissipation Ta=25℃ 1.2 TC=25℃ 10 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SC1098 2SC1098A Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEsat Collector-emitter saturation voltage VBEsat Base-emitter saturation voltage MAX UNIT IC=1.5A; IB=0.15 A 2.0 V IC=1.5A; IB=0.15 A 2.0 V 2SC1098 MIN V(BR)CEO TYP. 45 Collector-emitter breakdown voltage IC=10mA; IB=0 V 60 2SC1098A hFE-1 DC current gain IC=20mA ; VCE=5V 20 hFE-2 DC current gain IC=0.5A ; VCE=5V 40 ICBO Collector cut-off current VCB=45V ;IE=0 1.0 μA IEBO Emitter cut-off current VEB=3V; IC=0 1.0 μA COB fT 导体 半 电 固 Output capacitance IE=0; VCB=10V;f=1MHz Transition frequency IC=0.1A ; VCE=5V N 40-60 M L 50-100 80-160 R O T UC D N O IC M E S GE N A H INC hFE-2 Classifications K 120-250 2 250 40 pF 60 MHz Inchange Semiconductor Product Specification 2SC1098 2SC1098A Silicon NPN Power Transistors PACKAGE OUTLINE 导体 半 电 固 D N O IC R O T UC M E S GE N A H INC Fig.2 outline dimensions 3