Inchange Semiconductor Product Specification 2SC1626 Silicon NPN Power Transistors · DESCRIPTION ·With TO-220C package ·Complement to type 2SA816 APPLICATIONS ·Designed for the driver stages of 30-50W high-fidelity amplifiers and medium speed switching up to 2A peak current PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 80 V VCEO Collector-emitter voltage Open base 80 V VEBO Emitter-base voltage Open collector 5 V 750 mA 2 A IC Collector current ICM Collector current-peak PT Total power dissipation Ta=25℃ 1.5 TC=25℃ 10 W Tj Junction temperature 150 ℃ Tstg Storage temperature -50~150 ℃ Inchange Semiconductor Product Specification 2SC1626 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=10mA ; IB=0 80 V V(BR)CBO Collector-base breakdown voltage IC=0.1mA ; IE=0 80 V VCEsat Collector-emitter saturation voltage IC=500mA; IB=50mA 0.5 V VBE Base-emitter on voltage IC=500m A ; VCE=2V 1.0 V ICBO Collector cut-off current VCB=30V ;IE=0 0.5 μA IEBO Emitter cut-off current VEB=5V; IC=0 1 μA hFE-1 DC current gain IC=150m A ; VCE=2V 70 hFE-2 DC current gain IC=500m A ; VCE=2V 40 Transition frequency IC=150m A ; VCE=2V 50 Collector output capacitance IE=0;f=1MHz ; VCB=10V fT Cob CONDITIONS hFE-1 Classifications O Y 70-140 120-240 2 MIN TYP. MAX UNIT 240 MHz 13 pF Inchange Semiconductor Product Specification 2SC1626 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3