ISC 2SC1863

Inchange Semiconductor
Product Specification
2SC1863
Silicon NPN Power Transistors
DESCRIPTION
·With TO-66 package
·Continuous collector current-IC=7A
·Power dissipation –PC=40W @TC=25℃
APPLICATIONS
·Designed for general-purpose amplifier
and switching applications
PINNING (See Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
150
V
VCEO
Collector-emitter voltage
Open base
100
V
VEBO
Emitter-base voltage
Open collector
7
V
7
A
40
W
IC
Collector current
PT
Total power dissipation
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SC1863
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS)
Collector-emitter sustaining voltage
IC=100mA ; IB=0
V(BR)EBO
Emitter-base breakdown voltage
IE=1mA ; IC=0
Collector-emitter saturation voltage
IC=1A ;IB=0.1A
0.5
V
VBE
Base-emitter on voltage
IC=1A ; VCE=2V
1.0
V
ICBO
Collector cut-off current
VCB=150V; IE=0
100
μA
IEBO
Emitter cut-off current
VEB=7V; IC=0
100
μA
hFE-1
DC current gain
IC=3A ; VCE=5V
20
hFE-2
DC current gain
IC=5A ; VCE=5V
15
VCEsat
CONDITIONS
2
MIN
TYP.
MAX
UNIT
100
V
7
V
Inchange Semiconductor
Product Specification
2SC1863
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3