Inchange Semiconductor Product Specification 2SC2682 Silicon NPN Power Transistors DESCRIPTION ・With TO-126 package ・Complement to type 2SA1142 APPLICATIONS ・Audio frequency power amplifier; high frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base 体 导 半 Absolute maximum ratings(Ta=25℃) 固电 SYMBOL VCBO VCEO VEBO EM S E NG PARAMETER D N O IC R O T UC CONDITIONS VALUE UNIT Collector-base voltage Open emitter 180 V Collector-emitter voltage Open base 180 V Emitter-base voltage Open collector 5 V 0.1 A A H C IN IC Collector current PC Collector power dissipation Ta=25℃ 1.2 TC=25℃ 10 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SC2682 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEsat Collector-emitter saturation voltage VBEsat TYP. MAX UNIT IC=50mA; IB=5mA 0.12 0.5 V Base-emitter saturation voltage IC=50mA; IB=5mA 0.8 1.5 V ICBO Collector cut-off current VCB=180V; IE=0 1 μA IEBO Emitter cut-off current VEB=3V; IC=0 1 μA hFE-1 DC current gain IC=1mA ; VCE=5V 90 190 hFE-2 DC current gain IC=10mA ; VCE=5V 100 200 fT Transition frequency IC=20mA ; VCE=10V Cob Output capacitance 体 导 半 固电 100-200 IE=0 ; VCB=10V;f=1MHz EM S E NG hFE-2 Classifications Q CONDITIONS A H C IN P 160-320 2 MIN 320 200 MHz 3.2 pF D N O IC R O T UC Inchange Semiconductor Product Specification 2SC2682 Silicon NPN Power Transistors PACKAGE OUTLINE 体 导 半 固电 EM S E NG A H C IN D N O IC Fig.2 Outline dimensions 3 R O T UC