ISC 2SC3012

Inchange Semiconductor
Product Specification
2SC3012
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3PFa package
·Complement to type 2SA1232
·High transition frequency
APPLICATIONS
·Audio frequency power amplifier.
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
130
V
VCEO
Collector-emitter voltage
Open base
130
V
VEBO
Emitter-base voltage
Open collector
5
V
IC
Collector current
10
A
ICM
Collector current-peak
15
A
PC
Collector power dissipation
100
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SC3012
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEsat
Collector-emitter saturation voltage
VBEsat
‹
CONDITIONS
TYP.
MAX
UNIT
IC=5A; IB=0.5A
0.6
1.5
V
Base-emitter saturation voltage
IC=5A; IB=0.5A
1.3
2.0
V
ICBO
Collector cut-off current
VCB=130V; IE=0
50
μA
IEBO
Emitter cut-off current
VEB=3V; IC=0
50
μA
hFE-1
DC current gain
IC=2A ; VCE=5V
60
hFE-2
DC current gain
IC=5A ; VCE=5V
40
Cob
Output capacitance
IE=0 ; VCB=10V;f=1MHz
150
pF
fT
Transition frequency
IC=1A ; VCE=5V
60
MHz
hFE-1 Classifications
R
Q
P
60-120
100-200
160-320
2
MIN
320
Inchange Semiconductor
Product Specification
2SC3012
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.30mm)
3