Inchange Semiconductor Product Specification 2SC3420 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-126 package ・High DC current gain ・Low saturation voltage ・High collector power dissipation APPLICATIONS ・Storobo flash applications ・Medium power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base 体 导 半 固电 Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO EM S E G N A H PARAMETER R O T UC D N O IC CONDITIONS VALUE UNIT Collector-base voltage Open emitter 50 V Collector- emitter voltage Open base 20 V Emitter-base voltage Open collector 8 V INC IC Collector current 5 A ICM Collector current-peak 8 A IB Base current 1 A PC Collector power dissipation Ta=25℃ 1.5 TC=25℃ 10 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55～+150 ℃ Inchange Semiconductor Product Specification 2SC3420 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL CONDITIONS MIN TYP. MAX UNIT ICBO Collector cutoff current VCB=40V;IE=0 100 nA IEBO Emitter cutoff current VEB=8V;IC=0 100 nA V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0 VCEsat Collector-emitter saturation voltage IC=4A ;IB=0.1A 1 V VBE Base-emitter voltage IC=4A ; VCE=2V 1.5 V hFE-1 DC current gain IC=0.5A ; VCE=2V 140 hFE-2 DC current gain IC=4A ; VCE=2V 70 COb Output capacitance fT PARAMETER 体 导 半 固电 Transition frequency A H C IN 140-240 200-400 GR BL 300-600 2 V 600 R O T UC D N O IC IC=0.5A ; VCE=2V, EM S E NG Y hFE-1 Classifications IE=0; VCB=10V;f=1MHz 20 40 pF 100 MHz Inchange Semiconductor Product Specification 2SC3420 Silicon NPN Power Transistors PACKAGE OUTLINE 体 导 半 固电 EM S E NG A H C IN D N O IC Fig.2 Outline dimensions 3 R O T UC Inchange Semiconductor Product Specification 2SC3420 Silicon NPN Power Transistors 体 导 半 固电 EM S E NG A H C IN 4 D N O IC R O T UC