isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4368 DESCRIPTION ·Collector-Emitter Breakdown Voltage : VCEO= 150V(Min) ·Complement to Type 2SA1657 APPLICATIONS ·Designed for TV, monitor vertical output applications n c . i m e ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage VALUE UNIT s c s i . w w w 150 V 150 V 5.0 V IC Collector Current-Continuous 1.5 A IB Base Current-Continuous 0.5 A Collector Power Dissipation @TC= 25℃ 20 B PC W Collector Power Dissipation @Ta= 25℃ 2 TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4368 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 500mA; IB= 50mA 1.5 V ICBO Collector Cutoff Current VCB= 120V; IE= 0 10 μA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 10 μA hFE DC Current Gain IC= 500mA; VCE= 10V COB Collector Output Capacitance fT CONDITIONS w isc Website：www.iscsemi.cn TYP. MAX 150 UNIT V 40 n c . i m e s c is . w w Current-Gain—Bandwidth Product MIN 140 IE= 0; VCB= 10V; f= 1.0MHz 35 pF IC= 500m A; VCE= 10V 4 MHz 2