isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD113 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 80V (Min) ·High Power Dissipation ·High Current Capability APPLICATIONS ·Audio power amplifier, power switching applications. ·DC-DC converter and regulator applications. n c . i m e ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL s c s .i PARAMETER ww MAX UNIT 100 V 80 V VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage 10 V IC Collector Current-Continuous 30 A IE Emitter Current-Continuous -30 A IB Base Current-Continuous 5 A PC Collector Power Dissipation @TC=25℃ 200 W Tj Junction Temperature 150 ℃ -65~150 ℃ B Tstg w Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD113 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; RBE= ∞ 80 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA; IC= 0 10 V VCE(sat) Collector-Emitter Saturation Voltage IC= 15A; IB= 3A 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 15A; IB= 3A 2.5 V ICBO Collector Cutoff Current VCB= 50V; IE= 0 2 mA IEBO Emitter Cutoff Current VEB= 10V; IC= 0 50 mA hFE-1 DC Current Gain hFE-2 DC Current Gain COB Output Capacitance fT w hFE-1 Classifications Y 50-150 100-300 isc Website：www.iscsemi.cn MIN n c . i m e s c s .i ww Current-Gain—Bandwidth Product O CONDITIONS IC= 1A; VCE= 5V 50 IC= 15A; VCE= 5V 10 TYP. MAX UNIT 300 IE= 0; VCB= 50V; ftest= 1.0MHz 400 pF IC= 1A; VCE= 10V 1.5 MHz