isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION ·High DC Current Gain : hFE= 1000(Min.)@ IC= 10A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 100V(Min) APPLICATIONS ·Designed for audio frequency power amplifier and low speed high current switching industrial use. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak 20 A Base Current- Continuous 1 A Collector Power Dissipation @Ta=25℃ 3 IB B PC Tj Tstg W Collector Power Dissipation @TC=25℃ 80 Junction Temperature 150 ℃ -55~150 ℃ Storage Temperature Range isc Website：www.iscsemi.cn 2SD1210 isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1210 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCE(sat) Collector-Emitter Saturation Voltage VBE(sat) CONDITIONS MIN TYP. MAX UNIT IC= 10A, IB= 25mA 1.5 V Base-Emitter Saturation Voltage IC= 10A, IB= 25mA 2.0 V ICBO Collector Cutoff current VCB= 100V, IE= 0 10 μA IEBO Emitter Cutoff Current VEB= 8V; IC= 0 5 mA hFE DC Current Gain IC= 10A; VCE= 2V 1000 Switching Times ton Turn-On Time tstg Storage Time tf Fall Time isc Website：www.iscsemi.cn IC = 10A,IB1 = -IB2= 25mA; RL= 5Ω;VCC≈ 50V 1.0 μs 5.0 μs 2.0 μs