isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1841 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 100V(Min) ·High Current Capability ·Wide Area of Safe Operation ·Complement to Type 2SB1231 APPLICATIONS ·Designed for motor drivers, relay drivers, converters and other general high-current switching applications. n c . i m e ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL s c s i . w PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage w w VALUE UNIT 110 V 100 V 6 V IC Collector Current-Continuous 25 A ICP Collector Current-Pulse 40 A IB Base Current-Continuous 8 A Collector Power Dissipation @ Ta=25℃ 3 B W PC TJ Tstg Collector Power Dissipation @ TC=25℃ 120 Junction Temperature 150 ℃ -55~150 ℃ Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1841 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; RBE= ∞ 100 V V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 110 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 6 V VCE(sat) Collector-Emitter Saturation Voltage IC= 10A; IB= 1A 0.8 V VBE(sat) Base -Emitter Saturation Voltage IC= 10A; IB= 1A 1.5 V ICBO Collector Cutoff Current VCB= 100V; IE= 0 100 μA IEBO Emitter Cutoff Current 100 μA hFE-1 DC Current Gain hFE-2 DC Current Gain hFE-1 Classifications P Q 50-100 70-140 n c . i m e s c s i . w w w isc Website：www.iscsemi.cn MIN VEB= 5V; IC= 0 IC= 2.5A; VCE= 2V 50 IC= 10A; VCE= 2V 20 2 TYP. MAX 140 UNIT