isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION ·High DC Current Gain: hFE = 2000(Min)@ IC= -2A ·Wide Area of Safe Operation ·Low Collector-Emitter Saturation Voltage: VCE(sat) = -1.5V(Max)@ IC= -2A ·Complement to Type 2SD1190 APPLICATIONS ·Designed for motor drivers, printer hammer drivers, relay drivers, voltage regulators applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL s c s i . w PARAMETER w w VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage n c . i m e VALUE UNIT -70 V -60 V -6 V IC Collector Current-Continuous -4 A ICM Collector Current-Peak -6 A Collector Power Dissipation TC=25℃ 30 Collector Power Dissipation Ta=25℃ 1.75 Junction Temperature 150 ℃ -55~150 ℃ PC Tj Tstg W Storage Temperature Range isc Website：www.iscsemi.cn 2SB880 isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor 2SB880 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA, RBE= ∞ -60 V V(BR)CBO Collector-Base Breakdown Voltage IC= -5mA, IE= 0 -70 V VCE(sat) Collector-Emitter Saturation Voltage IC= -2A, IB= -4mA -1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= -2A, IB= -4mA -2.0 V ICBO Collector Cutoff Current VCB= -40V, IE= 0 -100 μA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -3 mA hFE DC Current Gain fT ton Turn-on Time tstg Storage Time tf Fall Time isc Website：www.iscsemi.cn MIN TYP. B B n c . i m e s c s .i w w w Current-Gain—Bandwidth Product Switching times CONDITIONS IC= -2A; VCE= -2V IC= -2A; VCE= -5V RL= 10Ω, VCC≈ -20V IC= -2A; IB1= -IB2= -4mA MAX UNIT 2000 20 MHz 0.5 μs 1.4 μs 1.2 μs