ISC 2SD845

Inchange Semiconductor
Product Specification
2SD845
Silicon NPN Power Transistors
・
DESCRIPTION
・With MT-200 package
・Complement to type 2SB755
・High transition frequency
・High breakdown voltage :VCEO=150V(min)
APPLICATIONS
・For power amplifier applications
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (MT-200) and symbol
R
O
体
T
U
导
D
半
N
O
C
固电
I
EM
S
E
G
N
A
INCH
Absolute maximum ratings (Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
PARAMETER
CONDITIONS
VALUE
UNIT
Collector-base voltage
Open emitter
150
V
Collector-emitter voltage
Open base
150
V
Emitter-base voltage
Open collector
5
V
IC
Collector current
12
A
IB
Base current
1.2
A
PC
Collector power dissipation
120
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SD845
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=0.1A; IB=0
150
V
V(BR)EBO
Emitter-base breakdown voltage
IE=10mA; IC=0
5
V
Collector-emitter saturation voltage
IC=5 A;IB=0.5 A
2.0
V
VBE
Base-emitter on voltage
IC=5A ; VCE=5V
1.5
V
ICBO
Collector cut-off current
VCB=150V; IE=0
-50
μA
IEBO
Emitter cut-off current
VEB=5V; IC=0
-50
μA
hFE
DC current gain
IC=1A ; VCE=5V
VCEsat
fT
‹
CONDITIONS
55-110
TYP.
55
MAX
IC=1A ; VCE=10V
O
80-160
2
UNIT
160
R
O
体
T
U
导
D
半
N
O
C
固电
I
EM
S
E
G
N
A
INCH
Transition frequency
hFE classifications
R
MIN
20
MHz
Inchange Semiconductor
Product Specification
2SD845
Silicon NPN Power Transistors
PACKAGE OUTLINE
R
O
体
T
U
导
D
半
N
O
C
固电
I
EM
S
E
G
N
A
INCH
Fig.2 Outline dimensions
3