isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU306F/307F DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 300V(Min)- BD306F 400V(Min)- BD307F ·Collector Current-8A APPLICATIONS ·Designed for use in switching regulators, inverters, motor controls, solenoid/relay drivers and deflection circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO PARAMETER VALUE BU306F 600 BU307F 700 BU306F 300 BU307F 400 Collector-Base Voltage UNIT V Collector-Emitter Voltage V Emitter-Base Voltage 9 V IC Collector Current-Continuous 8 A ICM Collector Current-Peak 16 A IB Base Current 4 A IBM Base Current-Peak 8 A PC Collector Power Dissipation @ TC=25℃ 20 W TJ Junction Temperature 150 ℃ -65~150 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case isc Website：www.iscsemi.cn MAX UNIT 6.12 ℃/W isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU306F/307F ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL V(BR)CEO PARAMETER Collector-Emitter Breakdown Voltage CONDITIONS BU306F MIN TYP. MAX UNIT 300 IC= 0.1A ;IB= 0; L=25mH V B BU307F 400 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 2A; IB= 0.4A 1.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 5A; IB= 1A IC= 5A; IB= 1A; TJ= 100℃ 1.5 2.0 V B B B VCE(sat)-3 Collector-Emitter Saturation Voltage IC= 8A; IB= 2A 3.0 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= 2A; IB= 0.4A 1.2 V VBE(sat)-2 Base-Emitter Saturation Voltage IC= 5A; IB= 1A IC= 5A; IB= 1A; TJ= 100℃ 1.6 1.5 V B B B B ICES Collector Cutoff Current VCE= VCESmax;VBE= -1.5V VCE= VCESmax;VBE= -1.5V;TJ= 100℃ 1 5 mA IEBO Emitter Cutoff Current VEB= 9V; IC=0 1 mA hFE-1 DC Current Gain IC= 0.5A ; VCE= 5V 15 50 hFE-2 DC Current Gain IC= 2A ; VCE= 5V 8 40 hFE-3 DC Current Gain IC= 5A ; VCE= 5V 6 30 COB Output Capacitance IE= 0 ; VCB= 10V 80 pF Current-Gain—Bandwidth Product IC= 0.5A ; VCE= 10V, ftest= 1.0MHz 4 MHz fT Switching Times ; Resistive Load td Delay Time tr Rise Time ts Storage Time tf Fall Time isc Website：www.iscsemi.cn IC= 5A; IB1= -IB2= 1A; VCC= 125V; tp= 25μs 0.1 μs 1.0 μs μs 3.0 0.7 2 μs