isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 200V (Min.) ·High DC Current Gain: hFE= 400(Min.)@IC= 10A ·Low Collector Saturation Voltage: VCE (sat)= 1.0V(Max.)@ IC= 5.0A APPLICATIONS ·Designed for general purpose amplifiers, low frequency switching and motor control applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continunous 15 A ICM Collector Current-Peak 30 A IB Base Current-Continunous 0.5 A PC Collector Power Dissipation @TC=25℃ 175 W Tj Junction Temperature 175 ℃ -65~200 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.86 ℃/W isc Website：www.iscsemi.cn MJ11020 isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor MJ11020 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 10A; IB= 0.1A 2.0 V V CE(sat)-2 Collector-Emitter Saturation Voltage IC= 15A; IB= 0.15A 3.4 V VBE(sat) Base-Emitter Saturation Voltage IC= 15A; IB= 0.15A 3.8 V VBE(on) Base-Emitter On Voltage IC= 10A, VCE= 5V 2.8 V ICEV Collector Cutoff Current VCE=200V;VBE(off)=1.5V VCE=200V;VBE(off)=1.5V;TC=150℃ 0.5 5.0 mA ICEO Collector Cutoff Current VCE= 100V; IB= 0 1.0 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 2.0 mA hFE-1 DC Current Gain IC= 10A, VCE= 5V 400 hFE-2 DC Current Gain IC= 15A, VCE= 5V 100 COB Output Capacitance IE= 0, VCB= 10V; ftest= 0.1MHz 200 UNIT V 15000 400 pF Switching Times td Delay Time tr Rise Time ts Storage Time tf Fall Time isc Website：www.iscsemi.cn VCC= 100V; IC= 10A; IB1= 0.1A VBE(off)= 5V 0.15 μs 1.2 μs 4.4 μs 10 μs