ISC BUT18

Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
BUT18 BUT18A
・
DESCRIPTION
・With TO-220C package
・High voltage ,high speed
APPLICATIONS
・Converters
・Inverters
・Switching regulators
・Motor control systems
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
导体
半
电
Absolute maximum ratings (Tc=25℃)
SYMBOL
固
VCBO
PARAMETER
CONDITIONS
BUT18
Open emitter
BUT18A
ANG
VEBO
INCH
IC
VCEO
Collector-emitter voltage
Emitter-base voltage
C
U
D
ON
IC
M
E
ES
Collector-base voltage
BUT18
TOR
VALUE
850
V
1000
400
Open base
BUT18A
UNIT
V
450
Open collector
9
V
Collector current
6
A
ICM
Collector current-peak
12
A
IB
Base current
3
A
IBM
Base current-peak
6
A
Ptot
Total power dissipation
110
W
TC=25℃
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-65~150
℃
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
BUT18 BUT18A
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BUT18
VCEO(SUS)
Collector-emitter
sustaining voltage
MIN
TYP.
MAX
UNIT
400
IC=0.1A; IB=0;L=25mH
V
450
BUT18A
VCEsat
Collector-emitter saturation voltage
IC=4A; IB=0.8A
1.5
V
VBEsat
Base-emitter saturation voltage
IC=4A; IB=0.8A
1.3
V
BUT18
VCE=850V ;VBE=0
Tj=125℃
1.0
2.0
BUT18A
VCE=1000V ;VBE=0
Tj=125℃
1.0
2.0
VEB=9V; IC=0
10
ICES
Collector
cut-off current
IEBO
Emitter cut-off current
hFE-1
DC current gain
导体
半
电
mA
IC=5mA ; VCE=5V
10
DC current gain
IC=1A ; VCE=5V
10
Switching times resistive load
M
E
S
GE
hFE-2
固
ton
Turn-on time
ts
Storage time
tf
Fall time
N
A
H
INC
2
35
R
O
T
UC
D
N
O
IC
IC=4A; IB1=-IB2=0.8A
VCC=250V
mA
35
1.0
μs
4.0
μs
0.8
μs
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
BUT18 BUT18A
PACKAGE OUTLINE
导体
半
电
固
R
O
T
UC
D
N
O
IC
M
E
S
GE
N
A
H
INC
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3