Inchange Semiconductor Product Specification BUW13 BUW13A Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・High voltage,high speed APPLICATIONS ・Converters ・Inverters ・Switching regulators ・Motor control systems PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol 导体 半 电 Absolute maximum ratings(Ta=25℃) SYMBOL 固 VCBO PARAMETER CONDITIONS BUW13 Open emitter BUW13A ANG VEBO INCH IC VCEO Collector-emitter voltage Emitter-base voltage C U D ON IC M E ES Collector-base voltage BUW13 TOR VALUE 850 V 1000 400 Open base BUW13A UNIT V 450 Open collector 9 V Collector current 15 A ICM Collector current-peak 30 A IB Base current 6 A IBM Base current-peak 9 A PT Total power dissipation 175 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~175 ℃ TC=25℃ Inchange Semiconductor Product Specification BUW13 BUW13A Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BUW13 MIN VCEO(SUS) IC=0.1A ; IB=0; L=25mH UNIT V 450 BUW13 VBEsat MAX 400 Collector-emitter sustaining voltage BUW13A VCEsat TYP. IC=10A; IB=2A Collector-emitter saturation voltage BUW13A IC=8A; IB=1.6A BUW13 IC=10A; IB=2A Base-emitter saturation voltage BUW13A 1.5 V 1.6 V IC=8A; IB=1.6A ICES Collector cut-off current VCE=Rated VCES; VBE=0 TC=125℃ 1.0 4.0 mA IEBO Emitter cut-off current VEB=9V; IC=0 10 mA hFE-1 DC current gain IC=20mA ; VCE=5V DC current gain IC=1.5A ; VCE=5V hFE-2 导体 半 电 固 Switching times resistive load Turn-on time ts Storage time tf IN Fall time OND IC M E ES G N A CH ton For BUW13 IC=10A ;IB1=-IB2=2A For BUW13A IC=8A ;IB1=-IB2=1.6A 2 R O T UC 10 10 35 35 1.0 μs 4.0 μs 0.8 μs Inchange Semiconductor Product Specification BUW13 BUW13A Silicon NPN Power Transistors PACKAGE OUTLINE 导体 半 电 固 D N O IC R O T UC M E S GE N A H INC Fig.2 Outline dimensions(unindicated tolerance:±0.10mm) 3