isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistors D45C8 DESCRIPTION ·Low Saturation Voltage ·Good Linearity of hFE ·Fast Switching Speeds ·Complement to Type D44C8 APPLICATIONS ·Designed for various specific and general purpose application such as: output and driver stages of amplifiers operating at frequencies from DC to greater than 1.0MHz series, shunt and switching regulators; low and high frequency inverters/ converters and many others. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage -70 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -4 A ICM Collector Current-Peak -6 A IB Base Current-Continuous -1 A PC Collector Power Dissipation @TC=25℃ 30 W Tj Junction Temperature 150 ℃ -55~150 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case isc Website：www.iscsemi.cn MAX UNIT 4.2 ℃/W isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistors D45C8 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCE(sat) Collector-Emitter Saturation Voltage VBE(sat) MAX UNIT IC= -1A ;IB= -50mA -0.5 V Base-Emitter Saturation Voltage IC= -1A ;IB= -100mA -1.3 V ICES Collector Cutoff Current VCE= -70V, -10 μA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -100 μA hFE-1 DC Current Gain IC= -0.2A ; VCE= -1V 40 hFE-2 DC Current Gain IC= -1A ; VCE= -1V 20 Current-Gain—Bandwidth Product IC= -20mA;VCE= -4V;ftest= 1MHz fT CONDITIONS MIN TYP 120 40 MHz Switching Times tr Rise Time ts Storage Time tf Fall Time isc Website：www.iscsemi.cn IC= -1A; IB1= -IB2= -0.1A; VCC= -20V 0.2 μs 0.6 μs 0.3 μs