JMNIC 2SA1789

JMnic
Product Specification
2SA1789
Silicon PNP Power Transistors
・
DESCRIPTION
・With TO-247 package
・Complement to type 2SC4653
・Low collector saturation voltage
APPLICATIONS
・For audio output applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Absolute maximum ratings(Tc=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-60
V
VCEO
Collector-emitter voltage
Open base
-60
V
VEBO
Emitter-base voltage
Open collector
-5
V
-12
A
80
W
IC
Collector current
PC
Collector power dissipation
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
JMnic
Product Specification
2SA1789
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=-25mA; IB=0
-60
V
V(BR)CBO
Collector-base breakdown voltage
IC=-1mA; IE=0
-60
V
V(BR)EBO
Emitter-base breakdown voltage
IE=-1mA; IC=0
-5
V
VCEsat
Collector-emitter saturation voltage
IC=-6A;IB=-0.6 A
-0.5
V
VBEsat
Base-emitter saturation voltage
IC=-6A;IB=-0.6 A
-2.0
V
ICBO
Collector cut-off current
VCB=-60V; IE=0
-10
μA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-10
μA
hFE
DC current gain
IC=-2A ; VCE=-2V
‹
CONDITIONS
hFE classifications
D
E
F
60-120
100-200
160-320
2
MIN
60
TYP.
MAX
320
UNIT
JMnic
Product Specification
2SA1789
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3