JMnic Product Specification 2SA483 Silicon PNP Power Transistors DESCRIPTION ・With TO-66 package ・Complement to type 2SC783 ・High voltage: VCEO=-150V(min) APPLICATIONS ・Power amplifier applications ・Vertical output applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-66) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -150 V VCEO Collector-emitter voltage Open base -150 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -1.5 A IE Emitter current 1.5 A PC Collector power dissipation 20 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ TC=25℃ JMnic Product Specification 2SA483 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ;IB=0 -150 V V(BR)CBO Collector-base breakdown voltage IC=-0.5mA ;IE=0 -150 V VCEsat Collector-emitter saturation voltage IC=-0.5A; IB=-50mA -1.8 V VBE Base-emitter on voltage IC=-0.5A ; VCE=-10V -1.8 V ICBO Collector cut-off current VCB=-150V; IE=0 -0.1 mA IEBO Emitter cut-off current VEB=-5V; IC=0 -0.1 mA hFE DC current gain IC=-0.1A ; VCE=-10V COB Output capacitance IE=0 ; VCB=-10V;f=1.0MHz 50 pF fT Transition frequency IC=-0.1A ; VCE=-10V 10 MHz hFE Classifications R O Y 30-80 70-140 120-240 2 MIN TYP. 30 MAX UNIT 240 JMnic Product Specification 2SA483 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions 3