Transistors SMD Type NPN Epitaxial Planar Silicon Transistor 2SD1622 Features Adoption of FBET process.. Very small size making it easy to provide highdensity hybrid IC’ s. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V Collector current IC 1 A Collector current (pulse) ICP 2 A PC 500 mW W Collector dissipation PC * 1.3 Junction temperature Tj 150 Storage temperature Tstg -55 to +150 * Mounted on ceramic board(250mm2X0.8mm) www.kexin.com.cn 1 Transistors SMD Type 2SD1622 Electrical Characteristics Ta = 25 Max Unit Collector cutoff current Parameter Symbol ICBO VCB = 50 V, IE=0 100 nA Emitter cutoff current IEBO VEB = 4 V, IC=0 100 nA DC current gain hFE VCE = 2 V , IC = 100 mA fT VCE = 10 V , IC = 50 mA Cob VCB = 10 V , f = 1.0MHz Gain bandwidth product Output capacitance Testconditons Typ 100 560 150 MHz 8.5 pF Collector-emitter saturation voltage VCE(sat) IC = 500 mA , IB = 50 mA 120 300 mV Base-emitter saturation voltage VBE(sat) IC = 500 mA , IB = 50 mA 0.9 1.2 V Collector-base breakdown voltage V(BR)CBO IC = 10ìA , IE = 0 60 V Collector-emitter breakdown voltage V(BR)CEO IC = 1mA , RBE = 50 V Emitter-base breakdown voltage V(BR)EBO IE = 10ìA , IC = 0 5 V Turn-on timie ton 40 ns Storage time tstg 350 ns Turn-off time tf 30 ns hFE Classification DE Marking 2 Min Rank R S T U hFE 100 200 140 280 200 400 280 560 www.kexin.com.cn