KEXIN 2SD1628

Transistors
SMD Type
NPN Epitaxial Planar Silicon Transistor
2SD1628
Features
Low saturation voltage.
High hFE.
Large current capacity.
Very small size making it easy to provide highdensity,
small-sized hybrid IC’
s.
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
60
V
Collector-emitter voltage
VCEO
20
V
Emitter-base voltage
VEBO
6
V
Collector current
IC
5
A
Collector current (pulse)
ICP
8
A
PC
500
mW
W
Collector dissipation
PC *
1.5
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
* Mounted on ceramic board(250mm2X0.8mm)
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Transistors
Diodes
SMD Type
2SD1628
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Typ
Max
Unit
Collector cutoff current
ICBO
VCB = 50 V, IE=0
100
nA
Emitter cutoff current
IEBO
VEB = 5 V, IC=0
100
nA
DC current gain
hFE
VCE = 2 V , IC = 0.5 A
Gain bandwidth product
Output capacitance
120
560
fT
VCE = 10 V , IC = 50 mA
120
MHz
Cob
VCB = 10 V , f = 1.0MHz
45
pF
VCE(sat) IC = 3 A , IB = 60 mA
Collector-emitter saturation voltage
Base-emitter saturation voltage
500
VBE(sat) IC = 3 A , IB = 60 mA
1.5
mV
V
Collector-base breakdown voltage
V(BR)CBO IC = 10ìA , IE = 0
60
V
Collector-emitter breakdown voltage
V(BR)CEO IC = 1mA , RBE =
20
V
Emitter-base breakdown voltage
V(BR)EBO IE = 10ìA , IC = 0
6
V
Turn-on timie
ton
30
ns
Storage time
tstg
300
ns
Turn-off time
tf
40
ns
hFE Classification
DK
Marking
2
Min
Rank
E
F
G
hFE
120 200
160 320
280 560
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